Processing of materials for uniform field emission
Abstract
This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.
- Inventors:
-
- Pleasanton, CA
- Livermore, CA
- Mountain View, CA
- Stanford, CA
- Pojoaque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 872088
- Patent Number(s):
- 5857882
- Assignee:
- Sandia Corporation ()
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- processing; materials; uniform; field; emission; method; produces; emitter; material; electron; emitting; surface; turn-on; voltage; surfaces; square; meter; voltages; 16v; produced; films; polycrystalline; diamond; diamond-like; carbon; graphite; amorphous; process; involves; conditioning; applying; electric; preferably; scanning; electrode; maintained; fixed; distance; 500v; enhance; uniformity; step; preceeded; implanting; nitrogen; argon; oxygen; hydrogen; layers; amorphous carbon; electron emitting; emitter material; square meter; electron emission; diamond-like carbon; process involves; electric field; field emission; surface layer; field emitter; surface layers; method produces; uniform electron; fixed distance; uniform field; emitting material; turn-on voltage; emitter materials; emitting surfaces; emitting surface; method produce; polycrystalline diamond; /445/427/
Citation Formats
Pam, Lawrence S, Felter, Thomas E, Talin, Alec, Ohlberg, Douglas, Fox, Ciaran, and Han, Sung. Processing of materials for uniform field emission. United States: N. p., 1999.
Web.
Pam, Lawrence S, Felter, Thomas E, Talin, Alec, Ohlberg, Douglas, Fox, Ciaran, & Han, Sung. Processing of materials for uniform field emission. United States.
Pam, Lawrence S, Felter, Thomas E, Talin, Alec, Ohlberg, Douglas, Fox, Ciaran, and Han, Sung. Fri .
"Processing of materials for uniform field emission". United States. https://www.osti.gov/servlets/purl/872088.
@article{osti_872088,
title = {Processing of materials for uniform field emission},
author = {Pam, Lawrence S and Felter, Thomas E and Talin, Alec and Ohlberg, Douglas and Fox, Ciaran and Han, Sung},
abstractNote = {This method produces a field emitter material having a uniform electron emitting surface and a low turn-on voltage. Field emitter materials having uniform electron emitting surfaces as large as 1 square meter and turn-on voltages as low as 16V/.mu.m can be produced from films of electron emitting materials such as polycrystalline diamond, diamond-like carbon, graphite and amorphous carbon by the method of the present invention. The process involves conditioning the surface of a field emitter material by applying an electric field to the surface, preferably by scanning the surface of the field emitter material with an electrode maintained at a fixed distance of at least 3 .mu.m above the surface of the field emitter material and at a voltage of at least 500V. In order to enhance the uniformity of electron emission the step of conditioning can be preceeded by ion implanting carbon, nitrogen, argon, oxygen or hydrogen into the surface layers of the field emitter material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1999},
month = {1}
}
Works referenced in this record:
Electron field emission from ion‐implanted diamond
journal, August 1995
- Zhu, W.; Kochanski, G. P.; Jin, S.
- Applied Physics Letters, Vol. 67, Issue 8
Similarities in the 'cold' electron emission characteristics of diamond coated molybdenum electrodes and polished bulk graphite surfaces
journal, October 1993
- Xu, N. S.; Tzeng, Y.; Latham, R. V.
- Journal of Physics D: Applied Physics, Vol. 26, Issue 10
Diamond cold cathode
journal, August 1991
- Geis, M. W.; Efremow, N. N.; Woodhouse, J. D.
- IEEE Electron Device Letters, Vol. 12, Issue 8