Efficient growth of HTS films with volatile elements
Abstract
A system for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source.
- Inventors:
-
- (Albuquerque, NM)
- Issue Date:
- Research Org.:
- SANDIA CORP
- OSTI Identifier:
- 872057
- Patent Number(s):
- 5851955
- Assignee:
- Sandia Corporation (Albuquerque, NM) SNL
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- efficient; growth; films; volatile; elements; applying; element-hts; layer; tl-hts; substrate; multiple; zone; furnace; method; heating; temperature; adjacent; source; material; sublimate; tl-oxide; separate; replenish; separate zone; multiple zone; zone furnace; /505/427/
Citation Formats
Siegal, Michael P., Overmyer, Donald L., and Dominguez, Frank. Efficient growth of HTS films with volatile elements. United States: N. p., 1998.
Web.
Siegal, Michael P., Overmyer, Donald L., & Dominguez, Frank. Efficient growth of HTS films with volatile elements. United States.
Siegal, Michael P., Overmyer, Donald L., and Dominguez, Frank. Thu .
"Efficient growth of HTS films with volatile elements". United States. https://www.osti.gov/servlets/purl/872057.
@article{osti_872057,
title = {Efficient growth of HTS films with volatile elements},
author = {Siegal, Michael P. and Overmyer, Donald L. and Dominguez, Frank},
abstractNote = {A system for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}
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