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Title: Efficient growth of HTS films with volatile elements

Abstract

A system for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source.

Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
872057
Patent Number(s):
5851955
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
efficient; growth; films; volatile; elements; applying; element-hts; layer; tl-hts; substrate; multiple; zone; furnace; method; heating; temperature; adjacent; source; material; sublimate; tl-oxide; separate; replenish; separate zone; multiple zone; zone furnace; /505/427/

Citation Formats

Siegal, Michael P., Overmyer, Donald L., and Dominguez, Frank. Efficient growth of HTS films with volatile elements. United States: N. p., 1998. Web.
Siegal, Michael P., Overmyer, Donald L., & Dominguez, Frank. Efficient growth of HTS films with volatile elements. United States.
Siegal, Michael P., Overmyer, Donald L., and Dominguez, Frank. Thu . "Efficient growth of HTS films with volatile elements". United States. https://www.osti.gov/servlets/purl/872057.
@article{osti_872057,
title = {Efficient growth of HTS films with volatile elements},
author = {Siegal, Michael P. and Overmyer, Donald L. and Dominguez, Frank},
abstractNote = {A system for applying a volatile element-HTS layer, such as Tl-HTS, to a substrate in a multiple zone furnace, said method includes heating at higher temperature, in one zone of the furnace, a substrate and adjacent first source of Tl-HTS material, to sublimate Tl-oxide from the source to the substrate; and heating at lower temperature, in a separate zone of the furnace, a second source of Tl-oxide to replenish the first source of Tl-oxide from the second source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

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