Title: Diamond film growth argon-carbon plasmas

Abstract

A method and system for manufacturing diamond film. The method involves forming a carbonaceous vapor, providing a gas stream of argon, hydrogen and hydrocarbon and combining the gas with the carbonaceous vapor, passing the combined carbonaceous vapor and gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the carbonaceous and deposition of a diamond film on a substrate.

Inventors:

Gruen, Dieter M ^[1]; Krauss, Alan R ^[2]; Liu, Shengzhong ^[3]; Pan, Xianzheng ^[4]; Zuiker, Christopher D ^[5]

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+ Show Inventor Affiliations

1. Downers Grove, IL
2. Naperville, IL
3. Canton, MI
4. Wuhan Hubei, CN
5. LaGrange, IL

Issue Date:

1998-01-01

Research Org.:

Argonne National Lab. (ANL), Argonne, IL (United States)

OSTI Identifier:

872038

Patent Number(s):

5849079

Assignee:

University of Chicago (Chicago, IL)

Patent Classifications (CPCs):

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/27 - Diamond only

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B32/26 - Preparation

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C14/221 - {Ion beam deposition

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

H01J9/025 - {of field emission cathodes}

C - CHEMISTRY C01 - INORGANIC CHEMISTRY C01B - NON-METALLIC ELEMENTS

C01B32/25 - Diamond

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B23/02 - Epitaxial-layer growth
C30B29/04 - Diamond
C30B23/00 - Single-crystal growth by condensing evaporated or sublimed materials

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/277 - {using other elements in the gas phase besides carbon and hydrogen
C23C14/0611 - {Diamond}
C23C16/274 - {using microwave discharges}
C23C14/0605 - {Carbon}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B29/605 - {Products containing multiple oriented crystallites, e.g. columnar crystallites}
C30B25/105 - {by irradiation or electric discharge}

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

C23C16/4481 - {by evaporation using carrier gas in contact with the source material

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH

C30B33/00 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure
C30B23/002 - {Controlling or regulating}

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DOE Contract Number:  

W-31109-ENG-38

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

diamond; film; growth; argon-carbon; plasmas; method; manufacturing; involves; forming; carbonaceous; vapor; providing; gas; stream; argon; hydrogen; hydrocarbon; combining; passing; combined; carrier; chamber; plasma; causing; fragmentation; deposition; substrate; film growth; method involves; gas stream; diamond film; involves forming; carbonaceous vapor; carrier stream; causing fragmentation; chamber causing; method involve; gas carrier; manufacturing diamond; /117/423/427/