Title: Photodetectors using III-V nitrides

Abstract

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

Inventors:

Moustakas, Theodore D.

Issue Date:

Tue Dec 08 00:00:00 EST 1998

Research Org.:

Boston Univ., MA (United States)

Sponsoring Org.:

USDOE

OSTI Identifier:

872031

Patent Number(s):

5847397

Application Number:

08/681,971

Assignee:

Trustees of Boston University (Boston, MA)

Patent Classifications (CPCs):

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:  

FG02-94ER81843

Resource Type:

Patent

Resource Relation:

Patent File Date: 1996 Jul 30

Country of Publication:

United States

Language:

English

Subject:

/250/