DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Photodetectors using III-V nitrides

Abstract

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

Inventors:
Issue Date:
Research Org.:
Boston Univ., MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
872031
Patent Number(s):
5847397
Application Number:
08/681,971
Assignee:
Trustees of Boston University (Boston, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FG02-94ER81843
Resource Type:
Patent
Resource Relation:
Patent File Date: 1996 Jul 30
Country of Publication:
United States
Language:
English
Subject:
/250/

Citation Formats

Moustakas, Theodore D. Photodetectors using III-V nitrides. United States: N. p., 1998. Web.
Moustakas, Theodore D. Photodetectors using III-V nitrides. United States.
Moustakas, Theodore D. Tue . "Photodetectors using III-V nitrides". United States. https://www.osti.gov/servlets/purl/872031.
@article{osti_872031,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, Theodore D.},
abstractNote = {A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {12}
}

Works referenced in this record:

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment
journal, September 1990


Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
journal, May 1992


Metal contacts to gallium nitride
journal, May 1993


High responsivity UV photoconductors based on GaN epilayers
conference, January 1993


A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
journal, January 1992


Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
journal, June 1995


Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
journal, August 1994


Thermal expansion of gallium nitride
journal, October 1994


High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
journal, June 1992


Growth and Doping of GaN Films by ECR-Assisted MBE
journal, January 1992


Local vibrational modes in Mg-doped gallium nitride
journal, May 1994


Conduction-electron spin resonance in zinc-blende GaN thin films
journal, November 1993


Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
journal, January 1993


Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986


Intensity dependence of photoluminescence in GaN thin films
journal, January 1994


Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
journal, September 1988


A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates
journal, January 1992


Blue‐violet light emitting gallium nitride pn junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
journal, January 1995


Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface
journal, May 1995


Hydrogenation of Gallium Nitride
journal, January 1993


Electron transport mechanism in gallium nitride
journal, January 1993


Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
journal, August 1991


Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
conference, June 1995

  • Misra, Mira; Moustakas, Theodore D.; Vaudo, Robert P.
  • SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings
  • https://doi.org/10.1117/12.211915

High Mobility GaN films Produced by ECR-Assisted MBE
journal, January 1992


GaN films prepared by ECR plasma-assisted deposition
journal, January 1994


Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
journal, October 1993


Hydrogenation of p ‐type gallium nitride
journal, April 1994