Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures
Abstract
A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.
- Inventors:
-
- 1304 Onava Ct., NE., Albuquerque, NM 87112
- (13609 Verbena Pl., NE., Albuquerque, NM 87112)
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871994
- Patent Number(s):
- 5840620
- Assignee:
- Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112);Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; restoring; resistance; indium; oxide; semiconductors; heating; sealed; structures; counteracting; increases; resistivity; encountered; resistive; layers; subjected; temperature; annealing; steps; semiconductor; device; fabrication; utilizes; recovery; step; returns; layer; original; caused; increase; anneal; comprises; 100; degree; 300; period; time; depends; observed; dielectric; device fabrication; method utilizes; indium oxide; dielectric layer; oxide layer; semiconductor device; annealing steps; comprises heating; annealing step; annealing temperature; oxide semiconductor; temperature annealing; temperature anneal; resistive layer; resistive layers; /438/257/428/
Citation Formats
Seager, Carleton H, and Evans, Jr., Joseph Tate. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States: N. p., 1998.
Web.
Seager, Carleton H, & Evans, Jr., Joseph Tate. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States.
Seager, Carleton H, and Evans, Jr., Joseph Tate. Thu .
"Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures". United States. https://www.osti.gov/servlets/purl/871994.
@article{osti_871994,
title = {Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures},
author = {Seager, Carleton H and Evans, Jr., Joseph Tate},
abstractNote = {A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}
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