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Title: Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures

Abstract

A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.

Inventors:
 [1];  [2]
  1. (1304 Onava Ct., NE., Albuquerque, NM 87112)
  2. (13609 Verbena Pl., NE., Albuquerque, NM 87112)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
871994
Patent Number(s):
5840620
Assignee:
Seager, Carleton H. (1304 Onava Ct., NE., Albuquerque, NM 87112);Evans, Jr., Joseph Tate (13609 Verbena Pl., NE., Albuquerque, NM 87112) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; restoring; resistance; indium; oxide; semiconductors; heating; sealed; structures; counteracting; increases; resistivity; encountered; resistive; layers; subjected; temperature; annealing; steps; semiconductor; device; fabrication; utilizes; recovery; step; returns; layer; original; caused; increase; anneal; comprises; 100; degree; 300; period; time; depends; observed; dielectric; device fabrication; method utilizes; indium oxide; dielectric layer; oxide layer; semiconductor device; annealing steps; comprises heating; annealing step; annealing temperature; oxide semiconductor; temperature annealing; temperature anneal; resistive layer; resistive layers; /438/257/428/

Citation Formats

Seager, Carleton H., and Evans, Jr., Joseph Tate. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States: N. p., 1998. Web.
Seager, Carleton H., & Evans, Jr., Joseph Tate. Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures. United States.
Seager, Carleton H., and Evans, Jr., Joseph Tate. Thu . "Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures". United States. https://www.osti.gov/servlets/purl/871994.
@article{osti_871994,
title = {Method for restoring the resistance of indium oxide semiconductors after heating while in sealed structures},
author = {Seager, Carleton H. and Evans, Jr., Joseph Tate},
abstractNote = {A method for counteracting increases in resistivity encountered when Indium Oxide resistive layers are subjected to high temperature annealing steps during semiconductor device fabrication. The method utilizes a recovery annealing step which returns the Indium Oxide layer to its original resistivity after a high temperature annealing step has caused the resistivity to increase. The recovery anneal comprises heating the resistive layer to a temperature between 100.degree. C. and 300.degree. C. for a period of time that depends on the annealing temperature. The recovery is observed even when the Indium Oxide layer is sealed under a dielectric layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

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