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Title: Resonant tunneling device with two-dimensional quantum well emitter and base layers

Abstract

A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.

Inventors:
 [1];  [2];  [3];  [4]
  1. (Sandia Park, NM)
  2. (Rockville, MD)
  3. (Tijeras, NM)
  4. (Pleasanton, CA)
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
871921
Patent Number(s):
5825049
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
resonant; tunneling; device; two-dimensional; quantum; emitter; base; layers; double; electron; layer; electrons; tunnel; dimensional; traveling; collector; voltage; interrupted; isolation; etch; depletion; gate; implant; prevent; source; drain; similarly; backgate; transistor; control; added; allowed; energy; recessed; change; operating; range; allow; integrated; complementary; devices; methods; forming; set; forth; utilizing; epoxy-bond; stop; ebase; pre-growth; implantation; post-growth; operating range; stop etch; emitter layer; base layer; set forth; resonant tunneling; tunneling device; base layers; /257/

Citation Formats

Simmons, Jerry A., Sherwin, Marc E., Drummond, Timothy J., and Weckwerth, Mark V. Resonant tunneling device with two-dimensional quantum well emitter and base layers. United States: N. p., 1998. Web.
Simmons, Jerry A., Sherwin, Marc E., Drummond, Timothy J., & Weckwerth, Mark V. Resonant tunneling device with two-dimensional quantum well emitter and base layers. United States.
Simmons, Jerry A., Sherwin, Marc E., Drummond, Timothy J., and Weckwerth, Mark V. Thu . "Resonant tunneling device with two-dimensional quantum well emitter and base layers". United States. https://www.osti.gov/servlets/purl/871921.
@article{osti_871921,
title = {Resonant tunneling device with two-dimensional quantum well emitter and base layers},
author = {Simmons, Jerry A. and Sherwin, Marc E. and Drummond, Timothy J. and Weckwerth, Mark V.},
abstractNote = {A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

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