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Title: Helicon wave excitation to produce energetic electrons for manufacturing semiconductors

Abstract

A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.

Inventors:
 [1];  [2]
  1. (Livermore, CA)
  2. (Fremont, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
871916
Patent Number(s):
5824602
Assignee:
United States of America as represented by United States (Washington, DC) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
helicon; wave; excitation; produce; energetic; electrons; manufacturing; semiconductors; plasma; source; controlled; varying; axial; magnetic; field; rf; power; controlling; formation; electron; current; carried; 90; minimal; 100; particular; similar; performance; expected; sources; properly; adjusting; geometry; control; production; semiconductor; thin-film; manufacture; process; applying; insulator; layer; silicon; oxide; etching; attracted; bombard; energy; accumulated; metal; layers; neutralize; currents; etch; slower; non-existent; rate; procedure; especially; advantageous; multilayer; trenches; formed; range; 18-0; 35; axial magnetic; electron current; insulator layer; power control; metal layers; plasma source; metal layer; magnetic field; silicon oxide; rf power; semiconductor manufacturing; energetic electrons; energetic electron; wave excitation; helicon wave; electron currents; produce energetic; /438/118/156/216/

Citation Formats

Molvik, Arthur W., and Ellingboe, Albert R. Helicon wave excitation to produce energetic electrons for manufacturing semiconductors. United States: N. p., 1998. Web.
Molvik, Arthur W., & Ellingboe, Albert R. Helicon wave excitation to produce energetic electrons for manufacturing semiconductors. United States.
Molvik, Arthur W., and Ellingboe, Albert R. Thu . "Helicon wave excitation to produce energetic electrons for manufacturing semiconductors". United States. https://www.osti.gov/servlets/purl/871916.
@article{osti_871916,
title = {Helicon wave excitation to produce energetic electrons for manufacturing semiconductors},
author = {Molvik, Arthur W. and Ellingboe, Albert R.},
abstractNote = {A helicon plasma source is controlled by varying the axial magnetic field or rf power controlling the formation of the helicon wave. An energetic electron current is carried on the wave when the magnetic field is 90 G; but there is minimal energetic electron current when the magnetic field is 100 G in one particular plasma source. Similar performance can be expected from other helicon sources by properly adjusting the magnetic field and power to the particular geometry. This control for adjusting the production of energetic electrons can be used in the semiconductor and thin-film manufacture process. By applying energetic electrons to the insulator layer, such as silicon oxide, etching ions are attracted to the insulator layer and bombard the insulator layer at higher energy than areas that have not accumulated the energetic electrons. Thus, silicon and metal layers, which can neutralize the energetic electron currents will etch at a slower or non-existent rate. This procedure is especially advantageous in the multilayer semiconductor manufacturing because trenches can be formed that are in the range of 0.18-0.35 mm or less.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

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