Multi-layer carbon-based coatings for field emission
Abstract
A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871903
- Patent Number(s):
- 5821680
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- multi-layer; carbon-based; coatings; field; emission; resistive; carbon; film; emitter; device; cold; cathode; applications; multi-layered; consists; layers; conductive; material; preferably; amorphous-tetrahedrally; coordinated; resistivities; adjacent; electron; surface; preferred; structure; top; layer; resistivity; bottom; edge; emitting; structures; plurality; selection; deposition; conditions; including; energy; depositing; species; presence; absence; elements; inert; gases; boron; desired; produced; inert gases; electron emission; cold cathode; top layer; inert gas; field emission; carbon film; field emitter; carbon layer; carbon material; adjacent layers; resistive carbon; depositing carbon; conductive carbon; carbon species; multi-layered film; multi-layer resistive; multi-layer carbon-based; cathode field; film field; deposition conditions; emitter device; emission applications; carbon-based coatings; coordinated carbon; /313/
Citation Formats
Sullivan, John P, and Friedmann, Thomas A. Multi-layer carbon-based coatings for field emission. United States: N. p., 1998.
Web.
Sullivan, John P, & Friedmann, Thomas A. Multi-layer carbon-based coatings for field emission. United States.
Sullivan, John P, and Friedmann, Thomas A. Thu .
"Multi-layer carbon-based coatings for field emission". United States. https://www.osti.gov/servlets/purl/871903.
@article{osti_871903,
title = {Multi-layer carbon-based coatings for field emission},
author = {Sullivan, John P and Friedmann, Thomas A},
abstractNote = {A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}
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Works referenced in this record:
Diamond‐like carbon films prepared with a laser ion source
journal, July 1988
- Wagal, S. S.; Juengerman, E. M.; Collins, C. B.
- Applied Physics Letters, Vol. 53, Issue 3
Bipolar transistor action in ion implanted diamond
journal, November 1982
- Prins, J. F.
- Applied Physics Letters, Vol. 41, Issue 10
Diamond cold cathode
journal, August 1991
- Geis, M. W.; Efremow, N. N.; Woodhouse, J. D.
- IEEE Electron Device Letters, Vol. 12, Issue 8
Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source
journal, October 1990
- Okano, Ken; Kiyota, Hideo; Iwasaki, Tatsuya
- Applied Physics A Solids and Surfaces, Vol. 51, Issue 4
Electron emission from chemical vapor deposited diamond and dielectric breakdown
journal, August 1994
- Shovlin, Joseph D.; Kordesch, Martin E.
- Applied Physics Letters, Vol. 65, Issue 7
Growth of Device-Quality Homoepitaxial Diamond Thin Films
journal, January 1989
- Geis, M. W.
- MRS Proceedings, Vol. 162