Multi-layer carbon-based coatings for field emission

Sullivan, John P; Friedmann, Thomas A

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Title: Multi-layer carbon-based coatings for field emission

Abstract

A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.

Inventors:

Sullivan, John P ^[1]; Friedmann, Thomas A ^[1]

Albuquerque, NM

Issue Date:: 1998-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 871903

Patent Number(s):: 5821680

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J1/304 - Field-emissive cathodes
H01J2201/319 - Circuit elements associated with the emitters by direct integration
H01J9/025 - {of field emission cathodes}

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DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: multi-layer; carbon-based; coatings; field; emission; resistive; carbon; film; emitter; device; cold; cathode; applications; multi-layered; consists; layers; conductive; material; preferably; amorphous-tetrahedrally; coordinated; resistivities; adjacent; electron; surface; preferred; structure; top; layer; resistivity; bottom; edge; emitting; structures; plurality; selection; deposition; conditions; including; energy; depositing; species; presence; absence; elements; inert; gases; boron; desired; produced; inert gases; electron emission; cold cathode; top layer; inert gas; field emission; carbon film; field emitter; carbon layer; carbon material; adjacent layers; resistive carbon; depositing carbon; conductive carbon; carbon species; multi-layered film; multi-layer resistive; multi-layer carbon-based; cathode field; film field; deposition conditions; emitter device; emission applications; carbon-based coatings; coordinated carbon; /313/

Citation Formats


                    Sullivan, John P, and Friedmann, Thomas A. Multi-layer carbon-based coatings for field emission.  United States: N. p., 1998. 
        Web.

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                    Sullivan, John P, & Friedmann, Thomas A. Multi-layer carbon-based coatings for field emission.  United States.

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                    Sullivan, John P, and Friedmann, Thomas A. Thu .  
        "Multi-layer carbon-based coatings for field emission".  United States.  https://www.osti.gov/servlets/purl/871903.

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@article{osti_871903,

  title        = {Multi-layer carbon-based coatings for field emission},

  author       = {Sullivan, John P and Friedmann, Thomas A},

  abstractNote = {A multi-layer resistive carbon film field emitter device for cold cathode field emission applications. The multi-layered film of the present invention consists of at least two layers of a conductive carbon material, preferably amorphous-tetrahedrally coordinated carbon, where the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure can be a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film can be a plurality of carbon layers, where adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {1}

}

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Works referenced in this record:

Diamond‐like carbon films prepared with a laser ion source
journal, July 1988

Wagal, S. S.; Juengerman, E. M.; Collins, C. B.
Applied Physics Letters, Vol. 53, Issue 3
https://doi.org/10.1063/1.100169

Bipolar transistor action in ion implanted diamond
journal, November 1982

Prins, J. F.
Applied Physics Letters, Vol. 41, Issue 10
https://doi.org/10.1063/1.93346

Diamond cold cathode
journal, August 1991

Geis, M. W.; Efremow, N. N.; Woodhouse, J. D.
IEEE Electron Device Letters, Vol. 12, Issue 8
https://doi.org/10.1109/55.119164

Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source
journal, October 1990

Okano, Ken; Kiyota, Hideo; Iwasaki, Tatsuya
Applied Physics A Solids and Surfaces, Vol. 51, Issue 4
https://doi.org/10.1007/BF00324317

Electron emission from chemical vapor deposited diamond and dielectric breakdown
journal, August 1994

Shovlin, Joseph D.; Kordesch, Martin E.
Applied Physics Letters, Vol. 65, Issue 7
https://doi.org/10.1063/1.112184

Growth of Device-Quality Homoepitaxial Diamond Thin Films
journal, January 1989

Geis, M. W.
MRS Proceedings, Vol. 162
https://doi.org/10.1557/PROC-162-15

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Similar Records

Title: Multi-layer carbon-based coatings for field emission

Abstract

Citation Formats

Diamond‐like carbon films prepared with a laser ion source journal, July 1988

Bipolar transistor action in ion implanted diamond journal, November 1982

Diamond cold cathode journal, August 1991

Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source journal, October 1990

Electron emission from chemical vapor deposited diamond and dielectric breakdown journal, August 1994

Growth of Device-Quality Homoepitaxial Diamond Thin Films journal, January 1989

Diamond‐like carbon films prepared with a laser ion source
journal, July 1988

Bipolar transistor action in ion implanted diamond
journal, November 1982

Diamond cold cathode
journal, August 1991

Synthesis of n-type semiconducting diamond film using diphosphorus pentaoxide as the doping source
journal, October 1990

Electron emission from chemical vapor deposited diamond and dielectric breakdown
journal, August 1994

Growth of Device-Quality Homoepitaxial Diamond Thin Films
journal, January 1989