GaAs photoconductive semiconductor switch
Abstract
A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.
- Inventors:
-
- Sandia Park, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- Sponsoring Org.:
- USDOE
- OSTI Identifier:
- 871826
- Patent Number(s):
- 5804815
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- gaas; photoconductive; semiconductor; switch; optically; triggered; pcss; implemented; reverse-biased; structure; passivation; layer; intrinsic; substrate; gap; electrodes; device; configuration; combination; addition; greatly; reduces; surface; current; leakage; prior; devices; enables; employment; expensive; reliable; dc; charging; systems; pulsed; photoconductive semiconductor; passivation layer; greatly reduces; gaas substrate; semiconductor switch; optically triggered; current leakage; reduces surface; greatly reduce; /250/257/
Citation Formats
Loubriel, Guillermo M, Baca, Albert G, and Zutavern, Fred J. GaAs photoconductive semiconductor switch. United States: N. p., 1998.
Web.
Loubriel, Guillermo M, Baca, Albert G, & Zutavern, Fred J. GaAs photoconductive semiconductor switch. United States.
Loubriel, Guillermo M, Baca, Albert G, and Zutavern, Fred J. Thu .
"GaAs photoconductive semiconductor switch". United States. https://www.osti.gov/servlets/purl/871826.
@article{osti_871826,
title = {GaAs photoconductive semiconductor switch},
author = {Loubriel, Guillermo M and Baca, Albert G and Zutavern, Fred J},
abstractNote = {A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Thu Jan 01 00:00:00 EST 1998},
month = {Thu Jan 01 00:00:00 EST 1998}
}
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Works referenced in this record:
High Current Density Contacts for GaAs Photoconductive Semiconductor Switches
conference, January 1993
- Baca, A. G.; Hjalmarson, H. P.; Loubriel, G. M.
- Ninth IEEE International Pulsed Power Conference