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Title: GaAs photoconductive semiconductor switch

Abstract

A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.

Inventors:
 [1];  [2];  [2]
  1. (Sandia Park, NM)
  2. (Albuquerque, NM)
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Sponsoring Org.:
USDOE
OSTI Identifier:
871826
Patent Number(s):
5804815
Assignee:
Sandia Corporation (Albuquerque, NM) ALO
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
gaas; photoconductive; semiconductor; switch; optically; triggered; pcss; implemented; reverse-biased; structure; passivation; layer; intrinsic; substrate; gap; electrodes; device; configuration; combination; addition; greatly; reduces; surface; current; leakage; prior; devices; enables; employment; expensive; reliable; dc; charging; systems; pulsed; photoconductive semiconductor; passivation layer; greatly reduces; gaas substrate; semiconductor switch; optically triggered; current leakage; reduces surface; greatly reduce; /250/257/

Citation Formats

Loubriel, Guillermo M., Baca, Albert G., and Zutavern, Fred J. GaAs photoconductive semiconductor switch. United States: N. p., 1998. Web.
Loubriel, Guillermo M., Baca, Albert G., & Zutavern, Fred J. GaAs photoconductive semiconductor switch. United States.
Loubriel, Guillermo M., Baca, Albert G., and Zutavern, Fred J. Thu . "GaAs photoconductive semiconductor switch". United States. https://www.osti.gov/servlets/purl/871826.
@article{osti_871826,
title = {GaAs photoconductive semiconductor switch},
author = {Loubriel, Guillermo M. and Baca, Albert G. and Zutavern, Fred J.},
abstractNote = {A high gain, optically triggered, photoconductive semiconductor switch (PCSS) implemented in GaAs as a reverse-biased pin structure with a passivation layer above the intrinsic GaAs substrate in the gap between the two electrodes of the device. The reverse-biased configuration in combination with the addition of the passivation layer greatly reduces surface current leakage that has been a problem for prior PCSS devices and enables employment of the much less expensive and more reliable DC charging systems instead of the pulsed charging systems that needed to be used with prior PCSS devices.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

Patent:

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