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Title: Growth of oxide exchange bias layers

Abstract

An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.

Inventors:
 [1];  [2]
  1. (Fremont, CA)
  2. (Bloomington, MN)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
871722
Patent Number(s):
5783262
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
growth; oxide; exchange; bias; layers; nio; coo; nicoo; antiferromagnetic; layer; produced; beam; sputtering; target; pure; argon; gas; oxygen; introduced; example; magnetoresistive; readback; heads; shift; hysteresis; loops; ferromagnetic; films; zero; field; axis; bia; fabricated; substrate; temperature; 200; degree; voltage; 1000v; current; 20; deposition; rate; ang; resulting; film; amorphous; oxide layers; zero field; beam current; oxygen gas; oxide layer; deposition rate; substrate temperature; beam sputtering; sputtering gas; gas introduced; rate temperature; hysteresis loop; exchange bias; /427/204/

Citation Formats

Chaiken, Alison, and Michel, Richard P. Growth of oxide exchange bias layers. United States: N. p., 1998. Web.
Chaiken, Alison, & Michel, Richard P. Growth of oxide exchange bias layers. United States.
Chaiken, Alison, and Michel, Richard P. Thu . "Growth of oxide exchange bias layers". United States. https://www.osti.gov/servlets/purl/871722.
@article{osti_871722,
title = {Growth of oxide exchange bias layers},
author = {Chaiken, Alison and Michel, Richard P.},
abstractNote = {An oxide (NiO, CoO, NiCoO) antiferromagnetic exchange bias layer produced by ion beam sputtering of an oxide target in pure argon (Ar) sputtering gas, with no oxygen gas introduced into the system. Antiferromagnetic oxide layers are used, for example, in magnetoresistive readback heads to shift the hysteresis loops of ferromagnetic films away from the zero field axis. For example, NiO exchange bia layers have been fabricated using ion beam sputtering of an NiO target using Ar ions, with the substrate temperature at 200.degree. C., the ion beam voltage at 1000V and the beam current at 20 mA, with a deposition rate of about 0.2 .ANG./sec. The resulting NiO film was amorphous.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

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