Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Mahan, Archie Harvin; Molenbroek, Edith C; Nelson, Brent P

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Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Abstract

A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

Inventors:

Mahan, Archie Harvin ^[1]; Molenbroek, Edith C ^[2]; Nelson, Brent P ^[1]

Golden, CO
Boulder, CO

Issue Date:: 1998-07-07

Research Org.:: Midwest Research Institute, Kansas City, MO (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 871684

Patent Number(s):: 5776819

Assignee:: Midwest Research Institute (Kansas City, MO)

Patent Classifications (CPCs):: C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C16/24 - Deposition of silicon only

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L21/02381 - {Silicon, silicon germanium, germanium}
H01L21/02422 - {Non-crystalline insulating materials, e.g. glass, polymers}
H01L21/02532 - {Silicon, silicon germanium, germanium}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L31/202 - {including only elements of Group IV of the Periodic System}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/50 - Photovoltaic [PV] energy

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02P - CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
Y02P70/50 - Manufacturing or production processes characterised by the final manufactured product

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DOE Contract Number:: AC02-83CH10093

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: deposition; device; quality; hydrogen; content; amorphous; silicon; films; hot; filament; technique; safe; source; gas; method; producing; hydrogenated; substrate; flowing; stream; diluted; silane; past; heated; silicon films; silicon source; hydrogen content; silicon film; device quality; amorphous silicon; hydrogenated amorphous; producing hydrogen; hot filament; silane gas; producing hydrogenated; source gas; heated filament; filament technique; /438/148/427/

Citation Formats


                    Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas.  United States: N. p., 1998. 
        Web.

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                    Mahan, Archie Harvin, Molenbroek, Edith C, & Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas.  United States.

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                    Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Tue .  
        "Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas".  United States.  https://www.osti.gov/servlets/purl/871684.

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@article{osti_871684,

  title        = {Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas},

  author       = {Mahan, Archie Harvin and Molenbroek, Edith C and Nelson, Brent P},

  abstractNote = {A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {7}

}

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Works referenced in this record:

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
journal, October 1981

Scott, B. A.; Plecenik, R. M.; Simonyi, E. E.
Le Journal de Physique Colloques, Vol. 42, Issue C4
https://doi.org/10.1051/jphyscol:19814139

Deposition of device quality, low H content amorphous silicon
journal, May 1991

Mahan, A. H.; Carapella, J.; Nelson, B. P.
Journal of Applied Physics, Vol. 69, Issue 9
https://doi.org/10.1063/1.348897

Production of high‐quality amorphous silicon films by evaporative silane surface decomposition
journal, September 1988

Doyle, J.; Robertson, R.; Lin, G. H.
Journal of Applied Physics, Vol. 64, Issue 6
https://doi.org/10.1063/1.341539

The defect density in amorphous silicon
journal, October 1989

Stutzmann, M.
Philosophical Magazine B, Vol. 60, Issue 4
https://doi.org/10.1080/13642818908205926

Microstructure of plasma‐deposited a‐Si : H films
journal, August 1979

Knights, J. C.; Lujan, R. A.
Applied Physics Letters, Vol. 35, Issue 3
https://doi.org/10.1063/1.91086

Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth
journal, January 1988

Tsai, C. C.; Thompson, R.; Doland, C.
MRS Proceedings, Vol. 118
https://doi.org/10.1557/PROC-118-49

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A method or producing hydrogenated amorphous silicon on a substrate, comprising the steps of: positioning the substrate in a deposition chamber at a distance of about 0.5 to 3.0 cm from a heatable filament in the deposition chamber; maintaining a pressure in said deposition chamber in the range of about 10 to 100 millitorr and pressure times substrate-filament spacing in the range of about 10 to 100 millitorr-cm, heating the filament to a temperature in the range of about 1,500 to 2,000.degree. C., and heating the substrate to a surface temperature in the range of about 280 to 475.degree. C.;more » « less
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A method of fabricating device quality, thin-film a-Si:H for use as semiconductor material in photovoltaic and other devices, comprising in any order; positioning a substrate in a vacuum chamber adjacent a plurality of heatable filaments with a spacing distance L between the substrate and the filaments; heating the filaments to a temperature that is high enough to obtain complete decomposition of silicohydride molecules that impinge said filaments into Si and H atomic species; providing a flow of silicohydride gas, or a mixture of silicohydride gas containing Si and H, in said vacuum chamber while maintaining a pressure P of saidmore » « less
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A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH.sub.4) over a high temperature, 2000.degree. C., tungsten (W) filament in the proximity of a high temperature, 400.degree. C., substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20-30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despite thismore » lowered hydrogen content. « less
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A high quality, low hydrogen content, hydrogenated amorphous silicon (a-Si:H) film is deposited by passing a stream of silane gas (SiH{sub 4}) over a high temperature, 2,000 C, tungsten (W) filament in the proximity of a high temperature, 400 C, substrate within a low pressure, 8 mTorr, deposition chamber. The silane gas is decomposed into atomic hydrogen and silicon, which in turn collides preferably not more than 20--30 times before being deposited on the hot substrate. The hydrogenated amorphous silicon films thus produced have only about one atomic percent hydrogen, yet have device quality electrical, chemical, and structural properties, despitemore » this lowered hydrogen content. 7 figs. « less

Similar Records

Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Abstract

Citation Formats

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD journal, October 1981

Deposition of device quality, low H content amorphous silicon journal, May 1991

Production of high‐quality amorphous silicon films by evaporative silane surface decomposition journal, September 1988

The defect density in amorphous silicon journal, October 1989

Microstructure of plasma‐deposited a‐Si : H films journal, August 1979

Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth journal, January 1988

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
journal, October 1981

Deposition of device quality, low H content amorphous silicon
journal, May 1991

Production of high‐quality amorphous silicon films by evaporative silane surface decomposition
journal, September 1988

The defect density in amorphous silicon
journal, October 1989

Microstructure of plasma‐deposited a‐Si : H films
journal, August 1979

Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth
journal, January 1988