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Title: Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas

Abstract

A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.

Inventors:
 [1];  [2];  [1]
  1. Golden, CO
  2. Boulder, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
871684
Patent Number(s):
5776819
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC02-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
deposition; device; quality; hydrogen; content; amorphous; silicon; films; hot; filament; technique; safe; source; gas; method; producing; hydrogenated; substrate; flowing; stream; diluted; silane; past; heated; silicon films; silicon source; hydrogen content; silicon film; device quality; amorphous silicon; hydrogenated amorphous; producing hydrogen; hot filament; silane gas; producing hydrogenated; source gas; heated filament; filament technique; /438/148/427/

Citation Formats

Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas. United States: N. p., 1998. Web.
Mahan, Archie Harvin, Molenbroek, Edith C, & Nelson, Brent P. Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas. United States.
Mahan, Archie Harvin, Molenbroek, Edith C, and Nelson, Brent P. Tue . "Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas". United States. https://www.osti.gov/servlets/purl/871684.
@article{osti_871684,
title = {Deposition of device quality, low hydrogen content, amorphous silicon films by hot filament technique using "safe" silicon source gas},
author = {Mahan, Archie Harvin and Molenbroek, Edith C and Nelson, Brent P},
abstractNote = {A method of producing hydrogenated amorphous silicon on a substrate by flowing a stream of safe (diluted to less than 1%) silane gas past a heated filament.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {7}
}

Patent:

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Works referenced in this record:

DEPOSITION OF a-Si : H BY HOMOGENEOUS CVD
journal, October 1981


Deposition of device quality, low H content amorphous silicon
journal, May 1991


Production of high‐quality amorphous silicon films by evaporative silane surface decomposition
journal, September 1988


The defect density in amorphous silicon
journal, October 1989


Microstructure of plasma‐deposited a‐Si : H films
journal, August 1979


Transition from Amorphous to Crystalline Silicon: Effect of Hydrogen on Film Growth
journal, January 1988