Boron doping a semiconductor particle
Abstract
A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.
- Inventors:
-
- 18912 Ravenglen Ct., Dallas, TX 75287
- 703 Horizon, Murphy, TX 75094
- 2530 Poplar Tr., Garland, TX 75042
- Issue Date:
- OSTI Identifier:
- 871611
- Patent Number(s):
- 5763320
- Application Number:
- 08/570,070
- Assignee:
- Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094);Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- ZAI-4-11294-04
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- boron; doping; semiconductor; particle; method; 10; 30; boric; acid; obtain; p-type; doped; silicon; spheres; powder; mixed; diluted; solution; predetermined; concentration; dried; 16; film; driven; 18; sphere; melt; procedure; mixes; uniformly; throughout; metered; 38; piles; melted; fused; 40; optical; furnace; processes; desired; resistivity; restricted; chemical; inexpensive; pose; special; shipping; handling; disposal; requirements; silicon powder; boric acid; doped silicon; optical furnace; semiconductor particle; uniformly throughout; predetermined concentration; silicon spheres; silicon sphere; boron doping; desired resistivity; diluted solution; /438/
Citation Formats
Stevens, Gary Don, Reynolds, Jeffrey Scott, and Brown, Louanne Kay. Boron doping a semiconductor particle. United States: N. p., 1998.
Web.
Stevens, Gary Don, Reynolds, Jeffrey Scott, & Brown, Louanne Kay. Boron doping a semiconductor particle. United States.
Stevens, Gary Don, Reynolds, Jeffrey Scott, and Brown, Louanne Kay. Tue .
"Boron doping a semiconductor particle". United States. https://www.osti.gov/servlets/purl/871611.
@article{osti_871611,
title = {Boron doping a semiconductor particle},
author = {Stevens, Gary Don and Reynolds, Jeffrey Scott and Brown, Louanne Kay},
abstractNote = {A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Jun 09 00:00:00 EDT 1998},
month = {Tue Jun 09 00:00:00 EDT 1998}
}
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