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Title: Boron doping a semiconductor particle

Abstract

A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.

Inventors:
 [1];  [2];  [3]
  1. 18912 Ravenglen Ct., Dallas, TX 75287
  2. 703 Horizon, Murphy, TX 75094
  3. 2530 Poplar Tr., Garland, TX 75042
Issue Date:
OSTI Identifier:
871611
Patent Number(s):
5763320
Application Number:
08/570,070
Assignee:
Stevens, Gary Don (18912 Ravenglen Ct., Dallas, TX 75287);Reynolds, Jeffrey Scott (703 Horizon, Murphy, TX 75094);Brown, Louanne Kay (2530 Poplar Tr., Garland, TX 75042)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
ZAI-4-11294-04
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
boron; doping; semiconductor; particle; method; 10; 30; boric; acid; obtain; p-type; doped; silicon; spheres; powder; mixed; diluted; solution; predetermined; concentration; dried; 16; film; driven; 18; sphere; melt; procedure; mixes; uniformly; throughout; metered; 38; piles; melted; fused; 40; optical; furnace; processes; desired; resistivity; restricted; chemical; inexpensive; pose; special; shipping; handling; disposal; requirements; silicon powder; boric acid; doped silicon; optical furnace; semiconductor particle; uniformly throughout; predetermined concentration; silicon spheres; silicon sphere; boron doping; desired resistivity; diluted solution; /438/

Citation Formats

Stevens, Gary Don, Reynolds, Jeffrey Scott, and Brown, Louanne Kay. Boron doping a semiconductor particle. United States: N. p., 1998. Web.
Stevens, Gary Don, Reynolds, Jeffrey Scott, & Brown, Louanne Kay. Boron doping a semiconductor particle. United States.
Stevens, Gary Don, Reynolds, Jeffrey Scott, and Brown, Louanne Kay. Tue . "Boron doping a semiconductor particle". United States. https://www.osti.gov/servlets/purl/871611.
@article{osti_871611,
title = {Boron doping a semiconductor particle},
author = {Stevens, Gary Don and Reynolds, Jeffrey Scott and Brown, Louanne Kay},
abstractNote = {A method (10,30) of boron doping a semiconductor particle using boric acid to obtain a p-type doped particle. Either silicon spheres or silicon powder is mixed with a diluted solution of boric acid having a predetermined concentration. The spheres are dried (16), with the boron film then being driven (18) into the sphere. A melt procedure mixes the driven boron uniformly throughout the sphere. In the case of silicon powder, the powder is metered out (38) into piles and melted/fused (40) with an optical furnace. Both processes obtain a p-type doped silicon sphere with desired resistivity. Boric acid is not a restricted chemical, is inexpensive, and does not pose any special shipping, handling, or disposal requirements.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {6}
}

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