Regenerative switching CMOS system
Abstract
Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.
- Inventors:
-
- (10328 Pinehurst Ave., Omaha, NE 68124)
- Issue Date:
- Research Org.:
- James D Welch
- OSTI Identifier:
- 871599
- Patent Number(s):
- 5760449
- Assignee:
- Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124) KCSO
- DOE Contract Number:
- FG47-93R701314
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- regenerative; switching; cmos; complementary; metal; oxide; semiconductor; schottky; barrier; field; effect; transistor; systems; seriesed; combination; p-channel; mosfets; source; junctions; electically; interconnected; drains; conventional; diffused; junction; mosfet; demonstrates; inverting; characteristics; disclosed; devices; unique; provide; operational; drain; current; vs; voltage; function; gate; polarities; opposite; referenced; common; terminal; polarity; applied; appropriate; channel; inversion; experimentally; derived; results; demonstrate; verify; operation; fabricated; n-type; silicon; respectively; procedure; vacuum; deposited; chromium; forming; provided; forming metal; common terminal; barrier mosfet; voltage applied; field effect; schottky barrier; metal oxide; gate voltage; vacuum deposited; effect transistor; oxide semiconductor; p-channel mosfets; complementary metal; experimentally derived; derived results; /257/
Citation Formats
Welch, James D. Regenerative switching CMOS system. United States: N. p., 1998.
Web.
Welch, James D. Regenerative switching CMOS system. United States.
Welch, James D. Thu .
"Regenerative switching CMOS system". United States. https://www.osti.gov/servlets/purl/871599.
@article{osti_871599,
title = {Regenerative switching CMOS system},
author = {Welch, James D.},
abstractNote = {Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}