Regenerative switching CMOS system

Welch, James D

Title: Regenerative switching CMOS system

Abstract

Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.

Inventors:

Welch, James D ^[1]

10328 Pinehurst Ave., Omaha, NE 68124

Issue Date:: 1998-06-02

Research Org.:: James D Welch

OSTI Identifier:: 871599

Patent Number(s):: 5760449

Assignee:: Welch, James D. (10328 Pinehurst Ave., Omaha, NE 68124)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L27/092 - complementary MIS field-effect transistors
H01L27/0629 - {in combination with diodes, or resistors, or capacitors}
H01L27/0727 - {in combination with diodes, or capacitors or resistors}
H01L27/095 - the components being Schottky barrier gate field-effect transistors
H01L29/7839 - {with Schottky drain or source contact}

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DOE Contract Number:: FG47-93R701314

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: regenerative; switching; cmos; complementary; metal; oxide; semiconductor; schottky; barrier; field; effect; transistor; systems; seriesed; combination; p-channel; mosfets; source; junctions; electically; interconnected; drains; conventional; diffused; junction; mosfet; demonstrates; inverting; characteristics; disclosed; devices; unique; provide; operational; drain; current; vs; voltage; function; gate; polarities; opposite; referenced; common; terminal; polarity; applied; appropriate; channel; inversion; experimentally; derived; results; demonstrate; verify; operation; fabricated; n-type; silicon; respectively; procedure; vacuum; deposited; chromium; forming; provided; forming metal; common terminal; barrier mosfet; voltage applied; field effect; schottky barrier; metal oxide; gate voltage; vacuum deposited; effect transistor; oxide semiconductor; p-channel mosfets; complementary metal; experimentally derived; derived results; /257/

Citation Formats


                    Welch, James D. Regenerative switching CMOS system.  United States: N. p., 1998. 
        Web.

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                    Welch, James D. Regenerative switching CMOS system.  United States.

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                    Welch, James D. Tue .  
        "Regenerative switching CMOS system".  United States.  https://www.osti.gov/servlets/purl/871599.

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@article{osti_871599,

  title        = {Regenerative switching CMOS system},

  author       = {Welch, James D},

  abstractNote = {Complementary Metal Oxide Semiconductor (CMOS) Schottky barrier Field Effect Transistor systems, which are a seriesed combination of N and P-Channel MOSFETS, in which Source Schottky barrier junctions of the N and P-Channel Schottky barrier MOSFETS are electically interconnected, (rather than the Drains as in conventional diffused junction CMOS), which Schottky barrier MOSFET system demonstrates Regenerative Inverting Switching Characteristics in use are disclosed. Both the N and P-Channel Schottky barrier MOSFET devices are unique in that they provide operational Drain Current vs. Drain to Source voltage as a function of Gate voltage only where the polarities of the Drain voltage and Gate voltage are opposite, referenced to the Source as a common terminal, and where the polarity of the voltage applied to the Gate is appropriate to cause Channel inversion. Experimentally derived results which demonstrate and verify the operation of N and P-Channel Schottky barrier MOSFETS actually fabricated on P and N-type Silicon respectively, by a common procedure using vacuum deposited Chromium as a Schottky barrier forming metal, are also provided.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {6}

}

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Works referenced in this record:

Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
journal, December 1976

Olowolafe, J. O.; Nicolet, M‐A.; Mayer, J. W.
Journal of Applied Physics, Vol. 47, Issue 12
https://doi.org/10.1063/1.322591

Metallurgical and electrical properties of chromium silicon interfaces
journal, January 1980

Martinez, A.; Esteve, D.; Guivarc'h, A.
Solid-State Electronics, Vol. 23, Issue 1
https://doi.org/10.1016/0038-1101(80)90168-9

Compound formation between amorphous silicon and chromium
journal, December 1980

Yacobi, B. G.; Szadkowski, A. J.; Zukotynski, S.
Journal of Applied Physics, Vol. 51, Issue 12
https://doi.org/10.1063/1.327592

SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
journal, January 1968

Lepselter, M. P.; Sze, S. M.
Proceedings of the IEEE, Vol. 56, Issue 8
https://doi.org/10.1109/PROC.1968.6618

The metal-semiconductor contact: an old device with a new future
journal, March 1970

Yu, A. Y. C.
IEEE Spectrum, Vol. 7, Issue 3
https://doi.org/10.1109/MSPEC.1970.5213256

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Title: Regenerative switching CMOS system

Abstract

Citation Formats

Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer journal, December 1976

Metallurgical and electrical properties of chromium silicon interfaces journal, January 1980

Compound formation between amorphous silicon and chromium journal, December 1980

SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain journal, January 1968

The metal-semiconductor contact: an old device with a new future journal, March 1970

Formation kinetics of CrSi2 films on Si substrates with and without interposed Pd2Si layer
journal, December 1976

Metallurgical and electrical properties of chromium silicon interfaces
journal, January 1980

Compound formation between amorphous silicon and chromium
journal, December 1980

SB-IGFET: An insulated-gate field-effect transistor using Schottky barrier contacts for source and drain
journal, January 1968

The metal-semiconductor contact: an old device with a new future
journal, March 1970