System for characterizing semiconductor materials and photovoltaic devices through calibration
Abstract
A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.
- Inventors:
-
- Denver, CO
- Arvada, CO
- Littleton, CO
- Golden, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 871581
- Patent Number(s):
- 5757474
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- characterizing; semiconductor; materials; photovoltaic; devices; calibration; method; apparatus; measuring; characteristics; piece; material; typically; including; dislocation; defect; density; grain; boundaries; reflectance; external; lbic; internal; minority; carrier; diffusion; length; light; source; integrating; sphere; detector; communicating; computer; measurement; calculation; calibrated; provide; accurate; absolute; values; performed; substituting; standard; sample; quantity; relevant; measured; characteristic; compared; constant; created; carrier diffusion; photovoltaic devices; diffusion length; grain boundaries; semiconductor materials; light source; semiconductor material; photovoltaic device; minority carrier; materials including; absolute value; provide accurate; integrating sphere; characterizing semiconductor; /356/
Citation Formats
Sopori, Bhushan L, Allen, Larry C, Marshall, Craig, Murphy, Robert C, and Marshall, Todd. System for characterizing semiconductor materials and photovoltaic devices through calibration. United States: N. p., 1998.
Web.
Sopori, Bhushan L, Allen, Larry C, Marshall, Craig, Murphy, Robert C, & Marshall, Todd. System for characterizing semiconductor materials and photovoltaic devices through calibration. United States.
Sopori, Bhushan L, Allen, Larry C, Marshall, Craig, Murphy, Robert C, and Marshall, Todd. Tue .
"System for characterizing semiconductor materials and photovoltaic devices through calibration". United States. https://www.osti.gov/servlets/purl/871581.
@article{osti_871581,
title = {System for characterizing semiconductor materials and photovoltaic devices through calibration},
author = {Sopori, Bhushan L and Allen, Larry C and Marshall, Craig and Murphy, Robert C and Marshall, Todd},
abstractNote = {A method and apparatus for measuring characteristics of a piece of material, typically semiconductor materials including photovoltaic devices. The characteristics may include dislocation defect density, grain boundaries, reflectance, external LBIC, internal LBIC, and minority carrier diffusion length. The apparatus includes a light source, an integrating sphere, and a detector communicating with a computer. The measurement or calculation of the characteristics is calibrated to provide accurate, absolute values. The calibration is performed by substituting a standard sample for the piece of material, the sample having a known quantity of one or more of the relevant characteristics. The quantity measured by the system of the relevant characteristic is compared to the known quantity and a calibration constant is created thereby.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {5}
}
Save to My Library
You must Sign In or Create an Account in order to save documents to your library.
Works referenced in this record:
A New Defect Etch for Polycrystalline Silicon
journal, January 1984
- Sopori, B. L.
- Journal of The Electrochemical Society, Vol. 131, Issue 3
Use of optical scattering to characterize dislocations in semiconductors
journal, January 1988
- Sopori, B. L.
- Applied Optics, Vol. 27, Issue 22