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Title: Nanostructure multilayer dielectric materials for capacitors and insulators

Abstract

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

Inventors:
 [1];  [2]
+ Show Inventor Affiliations
  1. (Palo Alto, CA)
  2. Livermore, CA
Issue Date:
Research Org.:
Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
OSTI Identifier:
871490
Patent Number(s):
5742471
Application Number:
08/755619
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
nanostructure; multilayer; dielectric; materials; capacitors; insulators; capacitor; formed; metal; conductors; opposite; dielectric-conductor; interface; layers; alternating; amorphous; zirconium; oxide; zro; alumina; engineered; increased; voltage; breakdown; extended; service; life; local; interfacial; function; reduce; charge; injection; increase; proper; material; choices; prevent; electrochemical; reactions; diffusion; conductor; physical; vapor; deposition; deposit; form; nano-laminate; service life; multilayer dielectric; dielectric materials; breakdown voltage; metal conductor; alternating layers; vapor deposition; chemical reaction; physical vapor; zirconium oxide; dielectric material; chemical reactions; electrochemical reaction; voltage breakdown; metal conductors; electrochemical reactions; interface layer; interface layers; metal conduct; /361/29/

Citation Formats

Barbee, Jr., Troy W., and Johnson, Gary W. Nanostructure multilayer dielectric materials for capacitors and insulators. United States: N. p., 1998. Web.
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Barbee, Jr., Troy W., & Johnson, Gary W. Nanostructure multilayer dielectric materials for capacitors and insulators. United States.
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Barbee, Jr., Troy W., and Johnson, Gary W. Tue . "Nanostructure multilayer dielectric materials for capacitors and insulators". United States. https://www.osti.gov/servlets/purl/871490.
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@article{osti_871490,
title = {Nanostructure multilayer dielectric materials for capacitors and insulators},
author = {Barbee, Jr., Troy W. and Johnson, Gary W},
abstractNote = {A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Tue Apr 21 00:00:00 EDT 1998},
month = {Tue Apr 21 00:00:00 EDT 1998}
}
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Works referenced in this record:

Novel high Voltage Vacuum Surface Flashover Insulator Technology
conference, January 1993

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