Nanostructure multilayer dielectric materials for capacitors and insulators

Title: Nanostructure multilayer dielectric materials for capacitors and insulators

Abstract

A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.

Inventors:

Barbee, Jr., Troy W. ^[1]; Johnson, Gary W ^[2]

(Palo Alto, CA)
Livermore, CA

Issue Date:: 1998-04-21

Research Org.:: Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)

OSTI Identifier:: 871490

Patent Number(s):: 5742471

Application Number:: 08/755619

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G4/10 - Metal-oxide dielectrics {

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/435 - Solid dielectric type

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01G - CAPACITORS
H01G4/20 - using combinations of dielectrics from more than one of groups H01G4/02 - H01G4/06

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: nanostructure; multilayer; dielectric; materials; capacitors; insulators; capacitor; formed; metal; conductors; opposite; dielectric-conductor; interface; layers; alternating; amorphous; zirconium; oxide; zro; alumina; engineered; increased; voltage; breakdown; extended; service; life; local; interfacial; function; reduce; charge; injection; increase; proper; material; choices; prevent; electrochemical; reactions; diffusion; conductor; physical; vapor; deposition; deposit; form; nano-laminate; service life; multilayer dielectric; dielectric materials; breakdown voltage; metal conductor; alternating layers; vapor deposition; chemical reaction; physical vapor; zirconium oxide; dielectric material; chemical reactions; electrochemical reaction; voltage breakdown; metal conductors; electrochemical reactions; interface layer; interface layers; metal conduct; /361/29/

Citation Formats


                    Barbee, Jr., Troy W., and Johnson, Gary W. Nanostructure multilayer dielectric materials for capacitors and insulators.  United States: N. p., 1998. 
        Web.

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                    Barbee, Jr., Troy W., & Johnson, Gary W. Nanostructure multilayer dielectric materials for capacitors and insulators.  United States.

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                    Barbee, Jr., Troy W., and Johnson, Gary W. Tue .  
        "Nanostructure multilayer dielectric materials for capacitors and insulators".  United States.  https://www.osti.gov/servlets/purl/871490.

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@article{osti_871490,

  title        = {Nanostructure multilayer dielectric materials for capacitors and insulators},

  author       = {Barbee, Jr., Troy W. and Johnson, Gary W},

  abstractNote = {A capacitor is formed of at least two metal conductors having a multilayer dielectric and opposite dielectric-conductor interface layers in between. The multilayer dielectric includes many alternating layers of amorphous zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3). The dielectric-conductor interface layers are engineered for increased voltage breakdown and extended service life. The local interfacial work function is increased to reduce charge injection and thus increase breakdown voltage. Proper material choices can prevent electrochemical reactions and diffusion between the conductor and dielectric. Physical vapor deposition is used to deposit the zirconium oxide (ZrO.sub.2) and alumina (Al.sub.2 O.sub.3) in alternating layers to form a nano-laminate.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {4}

}

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Works referenced in this record:

Novel high Voltage Vacuum Surface Flashover Insulator Technology
conference, January 1993

Elizondo, J. M.
Ninth IEEE International Pulsed Power Conference
https://doi.org/10.1109/PPC.1993.513326

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Title: Nanostructure multilayer dielectric materials for capacitors and insulators

Abstract

Citation Formats

Novel high Voltage Vacuum Surface Flashover Insulator Technology conference, January 1993

Novel high Voltage Vacuum Surface Flashover Insulator Technology
conference, January 1993