Structures having enhanced biaxial texture and method of fabricating same

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Title: Structures having enhanced biaxial texture and method of fabricating same

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Abstract

A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.

Inventors:

Goyal, Amit ^[1]; Budai, John D ^[2]; Kroeger, Donald M ^[1]; Norton, David P ^[1]; Specht, Eliot D ^[1]; Christen, David K ^[2]

Knoxville, TN
Oak Ridge, TN

Issue Date:: 1998-01-01

Research Org.:: Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)

OSTI Identifier:: 871472

Patent Number(s):: 5739086

Assignee:: Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)

Patent Classifications (CPCs):: C - CHEMISTRY C21 - METALLURGY OF IRON C21D - MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION

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C - CHEMISTRY C21 - METALLURGY OF IRON C21D - MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS
C21D8/12 - during manufacturing of articles with special electromagnetic properties

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T29/49014 - Superconductor

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/2461 - {Intermediate layers, e.g. for growth control}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/22 - Complex oxides

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12618 - Plural oxides

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/2448 - {Pulsed laser deposition, e.g. laser sputtering

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S428/93 - Electric superconducting

C - CHEMISTRY C21 - METALLURGY OF IRON C21D - MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS
C21D2201/04 - Single or very large crystals

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B23/02 - Epitaxial-layer growth

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/2454 - {characterised by the substrate}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/12493 - Composite
Y10T428/12611 - Oxide-containing component

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
Y10S505/701 - Coated or thin film device, i.e. active or passive

C - CHEMISTRY C23 - COATING METALLIC MATERIAL C23C - COATING METALLIC MATERIAL
C23C14/028 - {Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing}

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B29/225 - {based on rare earth copper oxides, e.g. high T-superconductors}

C - CHEMISTRY C21 - METALLURGY OF IRON C21D - MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS
C21D2201/05 - Grain orientation

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L39/248 - {Processes peculiar to the manufacture or treatment of filaments or composite wires}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
Y10T428/31678 - Of metal

C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
C30B25/02 - Epitaxial-layer growth

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DOE Contract Number:: AC05-84OR21400

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: structures; enhanced; biaxial; texture; method; fabricating; biaxially; textured; article; rolled; annealed; substrate; metal; face-centered; cubic; body-centered; hexagonal; close-packed; crystalline; structure; epitaxial; superconductor; device; epitaxially; deposited; thereon; epitaxially deposited; biaxially textured; deposited thereon; crystalline structure; biaxial texture; close-packed crystalline; centered cubic; face-centered cubic; textured substrate; textured article; device epitaxially; enhanced biaxial; body-centered cubic; epitaxial superconductor; hexagonal close-packed; line structure; /505/117/

Citation Formats


                    Goyal, Amit, Budai, John D, Kroeger, Donald M, Norton, David P, Specht, Eliot D, and Christen, David K. Structures having enhanced biaxial texture and method of fabricating same.  United States: N. p., 1998. 
        Web.

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                    Goyal, Amit, Budai, John D, Kroeger, Donald M, Norton, David P, Specht, Eliot D, & Christen, David K. Structures having enhanced biaxial texture and method of fabricating same.  United States.

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                    Goyal, Amit, Budai, John D, Kroeger, Donald M, Norton, David P, Specht, Eliot D, and Christen, David K. Thu .  
        "Structures having enhanced biaxial texture and method of fabricating same".  United States.  https://www.osti.gov/servlets/purl/871472.

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@article{osti_871472,

  title        = {Structures having enhanced biaxial texture and method of fabricating same},

  author       = {Goyal, Amit and Budai, John D and Kroeger, Donald M and Norton, David P and Specht, Eliot D and Christen, David K},

  abstractNote = {A biaxially textured article includes a rolled and annealed, biaxially textured substrate of a metal having a face-centered cubic, body-centered cubic, or hexagonal close-packed crystalline structure; and an epitaxial superconductor or other device epitaxially deposited thereon.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1998},

  month        = {1}

}

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