Critical illumination condenser for x-ray lithography

Cohen, Simon J; Seppala, Lynn G

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Title: Critical illumination condenser for x-ray lithography

Abstract

A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.

Inventors:

Cohen, Simon J ^[1]; Seppala, Lynn G ^[2]

Pleasanton, CA
Livermore, CA

Issue Date:: Tue Apr 07 00:00:00 EDT 1998

Research Org.:: Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)

OSTI Identifier:: 871460

Patent Number(s):: 5737137

Assignee:: Regents of University of California (Oakland, CA)

Patent Classifications (CPCs):: G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

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G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B19/0023 - {at least one surface having optical power}
G02B19/0047 - {for use with a light source
G02B19/0095 - {for use with ultra-violet radiation}

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70091 - {Illumination settings, i.e. intensity distribution in the pupil plane, angular distribution in the field plane
G03F7/70175 - {Lamphouse reflector arrangements, i.e. collecting light from solid angle upstream of the light source}
G03F7/702 - {Reflective illumination, i.e. reflective optical elements other than folding mirrors}

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DOE Contract Number:: W-7405-ENG-48

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: critical; illumination; condenser; x-ray; lithography; particularly; adapted; extreme; ultraviolet; euv; projection; based; field; imaging; laser; produced; plasma; source; spherical; mirrors; capable; illuminating; extent; mask; plane; scanning; primary; mirror; angles; radiation; incident; vary; eight; degrees; example; utilized; 200; requires; magnification; 26; times; constitutes; inverse; cassegrain; schwarzschild; configuration; 25; obstruction; 50; linear; third; provides; final; pupil; image; relay; multilayer; reflective; coating; narrow; bandwidth; multilayer reflective; narrow bandwidth; reflective coating; laser produced; primary mirror; laser plasma; projection lithography; x-ray lithography; particularly adapted; plasma source; extreme ultraviolet; radiation incident; narrow band; spherical mirror; spherical mirrors; third mirror; critical illumination; illumination condenser; produced plasma; /359/355/378/

Citation Formats


                    Cohen, Simon J, and Seppala, Lynn G. Critical illumination condenser for x-ray lithography.  United States: N. p., 1998. 
        Web.

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                    Cohen, Simon J, & Seppala, Lynn G. Critical illumination condenser for x-ray lithography.  United States.

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                    Cohen, Simon J, and Seppala, Lynn G. Tue .  
        "Critical illumination condenser for x-ray lithography".  United States.  https://www.osti.gov/servlets/purl/871460.

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@article{osti_871460,

  title        = {Critical illumination condenser for x-ray lithography},

  author       = {Cohen, Simon J and Seppala, Lynn G},

  abstractNote = {A critical illumination condenser system, particularly adapted for use in extreme ultraviolet (EUV) projection lithography based on a ring field imaging system and a laser produced plasma source. The system uses three spherical mirrors and is capable of illuminating the extent of the mask plane by scanning either the primary mirror or the laser plasma source. The angles of radiation incident upon each mirror of the critical illumination condenser vary by less than eight (8) degrees. For example, the imaging system in which the critical illumination condenser is utilized has a 200 .mu.m source and requires a magnification of 26.times.. The three spherical mirror system constitutes a two mirror inverse Cassegrain, or Schwarzschild configuration, with a 25% area obstruction (50% linear obstruction). The third mirror provides the final pupil and image relay. The mirrors include a multilayer reflective coating which is reflective over a narrow bandwidth.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Tue Apr 07 00:00:00 EDT 1998},

  month        = {Tue Apr 07 00:00:00 EDT 1998}

}

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Works referenced in this record:

Laser driver for soft-x-ray projection lithography
journal, January 1993

Hackel, Lloyd A.; Beach, Raymond J.; Dane, C. Brent
Applied Optics, Vol. 32, Issue 34
https://doi.org/10.1364/AO.32.006914

Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography
journal, January 1993

Sommargren, Gary E.; Seppala, Lynn G.
Applied Optics, Vol. 32, Issue 34
https://doi.org/10.1364/AO.32.006938

Front-end design issues in soft-x-ray projection lithography
journal, January 1993

Ceglio, Natale M.; Hawryluk, Andrew M.; Sommargren, Gary E.
Applied Optics, Vol. 32, Issue 34
https://doi.org/10.1364/AO.32.007050

X-ray production ~13 nm from laser-produced plasmas for projection x-ray lithography applications
journal, January 1993

Kauffman, R. L.; Phillion, D. W.; Spitzer, R. C.
Applied Optics, Vol. 32, Issue 34
https://doi.org/10.1364/AO.32.006897

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Similar Records

Title: Critical illumination condenser for x-ray lithography

Abstract

Citation Formats

Laser driver for soft-x-ray projection lithography journal, January 1993

Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography journal, January 1993

Front-end design issues in soft-x-ray projection lithography journal, January 1993

X-ray production ~13 nm from laser-produced plasmas for projection x-ray lithography applications journal, January 1993

Laser driver for soft-x-ray projection lithography
journal, January 1993

Condenser optics, partial coherence, and imaging for soft-x-ray projection lithography
journal, January 1993

Front-end design issues in soft-x-ray projection lithography
journal, January 1993

X-ray production ~13 nm from laser-produced plasmas for projection x-ray lithography applications
journal, January 1993