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Title: Production of films and powders for semiconductor device applications

Abstract

A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.

Inventors:
 [1];  [2];  [2]
  1. (Littleton, CO)
  2. (Golden, CO)
Issue Date:
Research Org.:
Midwest Research Institute
OSTI Identifier:
871432
Patent Number(s):
5731031
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
production; films; powders; semiconductor; device; applications; process; chemical; bath; deposition; selenide; sulfide; salts; employable; precursors; fabrication; solar; cell; devices; cu; 1-2; 1-3; 0-1; 27; 72-2; inga; 17; 96-2; 07-2; 663-3; reaction; vessel; containing; therein; substrate; form; layers; material; provided; relevant; solution; mixtures; introduced; sufficient; quantity; time; favorable; conditions; react; produce; resultant; salt; prepared; deposited; powder; floor; hydrazine; processes; producing; non-gallium; products; optionally; gallium-containing; function; strong; reducing; agent; enhance; cell device; reaction processes; device applications; solar cell; semiconductor material; semiconductor device; reaction vessel; reducing agent; sufficient time; vessel containing; reaction process; sufficient quantity; cell devices; solution mixture; containing therein; /427/136/423/438/

Citation Formats

Bhattacharya, Raghu Nath, Noufi, Rommel, and Wang, Li. Production of films and powders for semiconductor device applications. United States: N. p., 1998. Web.
Bhattacharya, Raghu Nath, Noufi, Rommel, & Wang, Li. Production of films and powders for semiconductor device applications. United States.
Bhattacharya, Raghu Nath, Noufi, Rommel, and Wang, Li. Thu . "Production of films and powders for semiconductor device applications". United States. https://www.osti.gov/servlets/purl/871432.
@article{osti_871432,
title = {Production of films and powders for semiconductor device applications},
author = {Bhattacharya, Raghu Nath and Noufi, Rommel and Wang, Li},
abstractNote = {A process for chemical bath deposition of selenide and sulfide salts as films and powders employable as precursors for the fabrication of solar cell devices. The films and powders include (1) Cu.sub.x Se.sub.n, wherein x=1-2 and n=1-3; (2) Cu.sub.x Ga.sub.y Se.sub.n, wherein x=1-2, y=0-1 and n=1-3; (3) Cu.sub.x In.sub.y Se.sub.n, wherein x=1-2.27, y=0.72-2 and n=1-3; (4) Cu.sub.x (InGa).sub.y Se.sub.n, wherein x=1-2.17, y=0.96-2 and n=1-3; (5) In.sub.y Se.sub.n, wherein y=1-2.3 and n=1-3; (6) Cu.sub.x S.sub.n, wherein x=1-2 and n=1-3; and (7) Cu.sub.x (InGa).sub.y (SeS).sub.n, wherein x=1-2, y=0.07-2 and n=0.663-3. A reaction vessel containing therein a substrate upon which will form one or more layers of semiconductor material is provided, and relevant solution mixtures are introduced in a sufficient quantity for a sufficient time and under favorable conditions into the vessel to react with each other to produce the resultant salt being prepared and deposited as one or more layers on the substrate and as a powder on the floor of the vessel. Hydrazine is present during all reaction processes producing non-gallium containing products and optionally present during reaction processes producing gallium-containing products to function as a strong reducing agent and thereby enhance reaction processes.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}

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