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Title: Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Abstract

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Inventors:
 [1];  [2];  [3];  [4];  [4];  [3];  [2]
  1. Littleton, CO
  2. Golden, CO
  3. Lakewood, CO
  4. Denver, CO
Issue Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
871430
Patent Number(s):
5730852
Application Number:
08/571,150
Assignee:
Davis, Joseph & Negley (Austin, TX)
Patent Classifications (CPCs):
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
DOE Contract Number:  
1326
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
preparation; cuxinygazsen; 0-2; z; 0-3; precursor; films; electrodeposition; fabricating; efficiency; solar; cells; quality; copper-indium-gallium-diselenide; useful; production; prepared; electrodepositing; constituent; metals; glass; substrate; followed; physical; vapor; deposition; copper; selenium; indium; adjust; final; stoichiometry; film; approximately; cu; voltage; 1-100; khz; combination; dc; improves; morphology; growth; rate; deposited; solution; comprising; organic; solvent; conjunction; increased; cathodic; potential; increase; gallium; content; electrodeposited; efficiency solar; precursor film; precursor films; growth rate; organic solvent; solar cell; solar cells; vapor deposition; dc voltage; solution comprising; physical vapor; constituent metal; /205/136/427/438/

Citation Formats

Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, and Noufi, Rommel. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells. United States: N. p., 1998. Web.
Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, & Noufi, Rommel. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells. United States.
Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, and Noufi, Rommel. Tue . "Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells". United States. https://www.osti.gov/servlets/purl/871430.
@article{osti_871430,
title = {Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells},
author = {Bhattacharya, Raghu N and Contreras, Miguel A and Keane, James and Tennant, Andrew L and Tuttle, John R and Ramanathan, Kannan and Noufi, Rommel},
abstractNote = {High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {3}
}

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Works referenced in this record:

Solution Growth and Electrodeposited CuInSe2Thin Films
journal, October 1983


Electrodeposition of CuInX () thin films
journal, January 1986


Recrystallization of electrodeposited copper indium diselenide thin films in an atmosphere of elemental selenium
journal, May 1994


Solar cells with improved efficiency based on electrodeposited copper indium diselenide thin films
journal, May 1994


Pulse Plated Electrodeposition of CuInSe2 Films
journal, July 1987


Electrochemical synthesis of photoactive In2Se3 thin films
journal, December 1987


Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells
journal, June 1987


Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 -based thin-film solar cell
journal, January 1995


Device quality thin films of CuInSe2 by a one-step electrodeposition process
journal, May 1988


Preparation and Characterization of Electrodeposited CuInSe 2 Thin Films
journal, April 1993


Optical properties of electrochemically deposited CuInSe2 thin films
journal, November 1991