Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer
Abstract
A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.
- Inventors:
-
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871414
- Patent Number(s):
- 5726462
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- semiconductor; structures; electrically; insulating; conducting; portions; formed; alsb-alloy; layer; structure; comprises; plurality; layers; substrate; including; iii-v; compound; alloy; comprising; aluminum; antimony; sb; chemically; converted; oxidation; process; form; superposed; portion; oxide; lateral; allows; formation; below; monocrystalline; forming; types; particular; utility; optoelectronic; devices; light-emitting; diodes; edge-emitting; lasers; vertical-cavity; surface-emitting; photodetectors; optical; modulators; waveguide; surface; normal; electronic; heterojunction; bipolar; transistors; field-effect; quantum-effect; expected; particularly; useful; 3-1; wavelength; range; acting; define; active; region; device; effectively; channel; electrical; current; therein; efficient; light; generation; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; field-effect transistor; iii-v compound; wavelength range; vertical-cavity surface-emitting; layer comprises; alloy comprising; active region; electrically insulating; particularly useful; semiconductor layer; electrically conducting; electrical current; compound semiconductor; electronic devices; surface-emitting lasers; alloy layer; process allows; crystalline semiconductor; conducting portion; oxidation process; semiconductor alloy; light-emitting diodes; semiconductor layers; structure comprises; particular utility; effect transistor; layers formed; portion formed; semiconductor structure; optical modulator; emitting laser; emitting device; surface normal; substrate including; field-effect transistors; electronic device; conducting portions; bipolar transistors; bipolar transistor; light-emitting device; comprising aluminum; effect transistors; edge-emitting lasers; heterojunction bipolar; insulating portion; emitting lasers; optoelectronic device; portions formed; /257/
Citation Formats
Spahn, Olga B, and Lear, Kevin L. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer. United States: N. p., 1998.
Web.
Spahn, Olga B, & Lear, Kevin L. Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer. United States.
Spahn, Olga B, and Lear, Kevin L. Tue .
"Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer". United States. https://www.osti.gov/servlets/purl/871414.
@article{osti_871414,
title = {Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer},
author = {Spahn, Olga B and Lear, Kevin L},
abstractNote = {A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {3}
}
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