Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof
Abstract
A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.
- Inventors:
-
- Sandia Park, NM
- Albuquerque, NM
- Issue Date:
- Research Org.:
- Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
- OSTI Identifier:
- 871350
- Patent Number(s):
- 5712865
- Assignee:
- Sandia Corporation (Albuquerque, NM)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-94AL85000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- temperature-insensitive; vertical-cavity; surface-emitting; lasers; method; fabrication; laser; vcsel; comprises; quantum-well; active; region; resonant; cavity; spectrum; high-order; subband; gtoreq; contribution; thereto; broadening; flattening; substantially; reducing; variation; operating; characteristics; temperature; range; forming; steps; providing; substrate; plurality; layers; thereon; distributed; bragg; reflector; dbr; mirror; stacks; sandwiched; therebetween; including; layer; predetermined; compositions; thicknesses; resonance; wavelength; overlapping; sandwiched therebetween; cavity surface; surface-emitting laser; bragg reflector; quantum-well layer; wavelength range; vertical-cavity surface-emitting; predetermined wavelength; operating characteristics; active region; temperature range; resonant cavity; surface-emitting lasers; substantially reducing; emitting laser; distributed bragg; cavity resonance; quantum-well active; layer composition; temperature-insensitive vertical-cavity; emitting lasers; operating characteristic; substantially overlap; /372/
Citation Formats
Chow, Weng W, Choquette, Kent D, and Gourley, Paul L. Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof. United States: N. p., 1998.
Web.
Chow, Weng W, Choquette, Kent D, & Gourley, Paul L. Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof. United States.
Chow, Weng W, Choquette, Kent D, and Gourley, Paul L. Tue .
"Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof". United States. https://www.osti.gov/servlets/purl/871350.
@article{osti_871350,
title = {Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof},
author = {Chow, Weng W and Choquette, Kent D and Gourley, Paul L},
abstractNote = {A temperature-insensitive vertical-cavity surface-emitting laser (VCSEL) and method for fabrication thereof. The temperature-insensitive VCSEL comprises a quantum-well active region within a resonant cavity, the active region having a gain spectrum with a high-order subband (n.gtoreq.2) contribution thereto for broadening and flattening the gain spectrum, thereby substantially reducing any variation in operating characteristics of the VCSEL over a temperature range of interest. The method for forming the temperature-insensitive VCSEL comprises the steps of providing a substrate and forming a plurality of layers thereon for providing first and second distributed Bragg reflector (DBR) mirror stacks with an active region sandwiched therebetween, the active region including at least one quantum-well layer providing a gain spectrum having a high-order subband (n.gtoreq.2) gain contribution, and the DBR mirror stacks having predetermined layer compositions and thicknesses for providing a cavity resonance within a predetermined wavelength range substantially overlapping the gain spectrum.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {1}
}
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