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Title: Silicon metal-semiconductor-metal photodetector

Silicon MSM photodiodes sensitive to radiation in the visible to near infrared spectral range are produced by altering the absorption characteristics of crystalline Si by ion implantation. The implantation produces a defected region below the surface of the silicon with the highest concentration of defects at its base which acts to reduce the contribution of charge carriers formed below the defected layer. The charge carriers generated by the radiation in the upper regions of the defected layer are very quickly collected between biased Schottky barrier electrodes which form a metal-semiconductor-metal structure for the photodiode.
Inventors:
 [1];  [1];  [1]
  1. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
871252
Assignee:
Sandia National Laboratories (Albuquerque, NM) SNL
Patent Number(s):
US 5691563
Contract Number:
AC04-76
Research Org:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA
Country of Publication:
United States
Language:
English
Subject:
silicon; metal-semiconductor-metal; photodetector; msm; photodiodes; sensitive; radiation; visible; near; infrared; spectral; range; produced; altering; absorption; characteristics; crystalline; implantation; produces; defected; region; below; surface; concentration; defects; base; reduce; contribution; charge; carriers; formed; layer; generated; upper; regions; quickly; collected; biased; schottky; barrier; electrodes; form; structure; photodiode; upper regions; absorption characteristics; charge carrier; spectral range; near infrared; charge carriers; schottky barrier; upper region; silicon metal; region below; carriers formed; carriers generated; metal structure; infrared spectral; silicon msm; silicon metal-semiconductor-metal; metal-semiconductor-metal photodetector; msm photodiodes; formed below; photodiodes sensitive; /257/