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Title: Monocrystalline test structures, and use for calibrating instruments

Abstract

An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. Frederick, MD
  2. Ellicott City, MD
  3. Ijamsville, MD
  4. Germantown, MD
  5. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
871213
Patent Number(s):
5684301
Assignee:
United States of America as represented by Secretary of Commerce (Washington, DC)
Patent Classifications (CPCs):
G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
DOE Contract Number:  
AC04-76
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
monocrystalline; structures; calibrating; instruments; improved; structure; measurement; width; conductive; lines; formed; substrates; performed; semiconductor; fabrication; measurements; starting; material; insulative; layer; beneath; surface; implantation; equivalent; leaving; processed; preferential; etching; accurately; define; components; substrate; removed; rear; form; transparent; window; inspected; transmissive-optical; techniques; electrical; optical; correlated; including; scanning; probe; microscopy; transparent window; semiconductor fabrication; layer formed; starting material; surface layer; scanning probe; optical technique; probe microscopy; monocrystalline layer; crystalline layer; calibrating instruments; conductive lines; /250/257/

Citation Formats

Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, and Sniegowski, Jeffry J. Monocrystalline test structures, and use for calibrating instruments. United States: N. p., 1997. Web.
Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, & Sniegowski, Jeffry J. Monocrystalline test structures, and use for calibrating instruments. United States.
Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, and Sniegowski, Jeffry J. Wed . "Monocrystalline test structures, and use for calibrating instruments". United States. https://www.osti.gov/servlets/purl/871213.
@article{osti_871213,
title = {Monocrystalline test structures, and use for calibrating instruments},
author = {Cresswell, Michael W and Ghoshtagore, R N and Linholm, Loren W and Allen, Richard A and Sniegowski, Jeffry J},
abstractNote = {An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Metrology of Atomic Force Microscopy for Si Nano-Structures
journal, June 1995


A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps
journal, June 1992