Monocrystalline test structures, and use for calibrating instruments

Cresswell, Michael W; Ghoshtagore, R N; Linholm, Loren W; Allen, Richard A; Sniegowski, Jeffry J

Title: Monocrystalline test structures, and use for calibrating instruments

Abstract

An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.

Inventors:

Cresswell, Michael W ^[1]; Ghoshtagore, R N ^[2]; Linholm, Loren W ^[3]; Allen, Richard A ^[4]; Sniegowski, Jeffry J ^[5]

Frederick, MD
Ellicott City, MD
Ijamsville, MD
Germantown, MD
Albuquerque, NM

Issue Date:: 1997-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 871213

Patent Number(s):: 5684301

Assignee:: United States of America as represented by Secretary of Commerce (Washington, DC)

Patent Classifications (CPCs):: G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES

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G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R31/2818 - {using test structures on, or modifications of, the card under test, made for the purpose of testing, e.g. additional components or connectors

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70616 - {Wafer pattern monitoring, i.e. measuring printed patterns or the aerial image at the wafer plane

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L22/34 - {Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70658 - {Electrical}
G03F7/70591 - {Testing optical components

G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R35/005 - {Calibrating

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L22/12 - {for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions

G - PHYSICS G03 - PHOTOGRAPHY G03F - PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES
G03F7/70633 - {Overlay

G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R31/303 - of integrated circuits

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01C - RESISTORS
H01C10/06 - adjustable by short-circuiting different amounts of the resistive element

G - PHYSICS G01 - MEASURING G01R - MEASURING ELECTRIC VARIABLES
G01R31/311 - of integrated circuits {

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DOE Contract Number:: AC04-76

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: monocrystalline; structures; calibrating; instruments; improved; structure; measurement; width; conductive; lines; formed; substrates; performed; semiconductor; fabrication; measurements; starting; material; insulative; layer; beneath; surface; implantation; equivalent; leaving; processed; preferential; etching; accurately; define; components; substrate; removed; rear; form; transparent; window; inspected; transmissive-optical; techniques; electrical; optical; correlated; including; scanning; probe; microscopy; transparent window; semiconductor fabrication; layer formed; starting material; surface layer; scanning probe; optical technique; probe microscopy; monocrystalline layer; crystalline layer; calibrating instruments; conductive lines; /250/257/

Citation Formats


                    Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, and Sniegowski, Jeffry J. Monocrystalline test structures, and use for calibrating instruments.  United States: N. p., 1997. 
        Web.

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                    Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, & Sniegowski, Jeffry J. Monocrystalline test structures, and use for calibrating instruments.  United States.

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                    Cresswell, Michael W, Ghoshtagore, R N, Linholm, Loren W, Allen, Richard A, and Sniegowski, Jeffry J. Wed .  
        "Monocrystalline test structures, and use for calibrating instruments".  United States.  https://www.osti.gov/servlets/purl/871213.

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@article{osti_871213,

  title        = {Monocrystalline test structures, and use for calibrating instruments},

  author       = {Cresswell, Michael W and Ghoshtagore, R N and Linholm, Loren W and Allen, Richard A and Sniegowski, Jeffry J},

  abstractNote = {An improved test structure for measurement of width of conductive lines formed on substrates as performed in semiconductor fabrication, and for calibrating instruments for such measurements, is formed from a monocrystalline starting material, having an insulative layer formed beneath its surface by ion implantation or the equivalent, leaving a monocrystalline layer on the surface. The monocrystalline surface layer is then processed by preferential etching to accurately define components of the test structure. The substrate can be removed from the rear side of the insulative layer to form a transparent window, such that the test structure can be inspected by transmissive-optical techniques. Measurements made using electrical and optical techniques can be correlated with other measurements, including measurements made using scanning probe microscopy.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {1}

}

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Works referenced in this record:

Metrology of Atomic Force Microscopy for Si Nano-Structures
journal, June 1995

Nagase, Masao; Namatsu, Hideo; Kurihara, Kenji
Japanese Journal of Applied Physics, Vol. 34, Issue Part 1, No. 6B
https://doi.org/10.1143/JJAP.34.3382

A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps
journal, June 1992

Allen, R. A.; Cresswell, M. W.; Buck, L. M.
IEEE Electron Device Letters, Vol. 13, Issue 6
https://doi.org/10.1109/55.145072

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Title: Monocrystalline test structures, and use for calibrating instruments

Abstract

Citation Formats

Metrology of Atomic Force Microscopy for Si Nano-Structures journal, June 1995

A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps journal, June 1992

Metrology of Atomic Force Microscopy for Si Nano-Structures
journal, June 1995

A new test structure for the electrical measurement of the width of short features with arbitrarily wide voltage taps
journal, June 1992