Global to push GA events into
skip to main content

Title: Semiconductor tunnel junction with enhancement layer

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.
Inventors:
 [1];  [2]
  1. (Sandia Park, NM)
  2. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
871198
Assignee:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5679963
Contract Number:
AC04-94AL85000
Research Org:
SANDIA CORP
Country of Publication:
United States
Language:
English
Subject:
semiconductor; tunnel; junction; enhancement; layer; incorporation; pseudomorphic; gaassb; runnel; diode; structure; affords; degree; freedom; designing; junctions; p-n; device; interconnects; previously; doping; levels; varied; control; tunneling; properties; valence; band; alignment; respect; surrounding; materials; greatly; relax; requirements; tunnel junction; p-n junction; valence band; structure affords; diode structure; gaassb layer; enhancement layer; sb layer; doping levels; junction device; /257/

Similar records in DOepatents and OSTI.GOV collections: