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Title: Semiconductor tunnel junction with enhancement layer

Abstract

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Inventors:
 [1];  [2]
  1. Sandia Park, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
871198
Patent Number(s):
5679963
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; tunnel; junction; enhancement; layer; incorporation; pseudomorphic; gaassb; runnel; diode; structure; affords; degree; freedom; designing; junctions; p-n; device; interconnects; previously; doping; levels; varied; control; tunneling; properties; valence; band; alignment; respect; surrounding; materials; greatly; relax; requirements; tunnel junction; p-n junction; valence band; structure affords; diode structure; gaassb layer; enhancement layer; sb layer; doping levels; junction device; /257/

Citation Formats

Klem, John F, and Zolper, John C. Semiconductor tunnel junction with enhancement layer. United States: N. p., 1997. Web.
Klem, John F, & Zolper, John C. Semiconductor tunnel junction with enhancement layer. United States.
Klem, John F, and Zolper, John C. Wed . "Semiconductor tunnel junction with enhancement layer". United States. https://www.osti.gov/servlets/purl/871198.
@article{osti_871198,
title = {Semiconductor tunnel junction with enhancement layer},
author = {Klem, John F and Zolper, John C},
abstractNote = {The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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