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Title: Semiconductor tunnel junction with enhancement layer

Abstract

The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.

Inventors:
 [1];  [2]
  1. Sandia Park, NM
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
871198
Patent Number(s):
5679963
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
semiconductor; tunnel; junction; enhancement; layer; incorporation; pseudomorphic; gaassb; runnel; diode; structure; affords; degree; freedom; designing; junctions; p-n; device; interconnects; previously; doping; levels; varied; control; tunneling; properties; valence; band; alignment; respect; surrounding; materials; greatly; relax; requirements; tunnel junction; p-n junction; valence band; structure affords; diode structure; gaassb layer; enhancement layer; sb layer; doping levels; junction device; /257/

Citation Formats

Klem, John F, and Zolper, John C. Semiconductor tunnel junction with enhancement layer. United States: N. p., 1997. Web.
Klem, John F, & Zolper, John C. Semiconductor tunnel junction with enhancement layer. United States.
Klem, John F, and Zolper, John C. Wed . "Semiconductor tunnel junction with enhancement layer". United States. https://www.osti.gov/servlets/purl/871198.
@article{osti_871198,
title = {Semiconductor tunnel junction with enhancement layer},
author = {Klem, John F and Zolper, John C},
abstractNote = {The incorporation of a pseudomorphic GaAsSb layer in a runnel diode structure affords a new degree of freedom in designing runnel junctions for p-n junction device interconnects. Previously only doping levels could be varied to control the tunneling properties. This invention uses the valence band alignment band of the GaAsSb with respect to the surrounding materials to greatly relax the doping requirements for tunneling.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

A 27.3% efficient Ga0.5In0.5P/GaAs tandem solar cell
journal, February 1990


Growth and properties of GaAsSb/InGaAs superlattices on InP
journal, May 1991


GaAs‐AlGaAs tunnel junctions for multigap cascade solar cells
journal, January 1982


AlGaAs/GaInP heterojunction tunnel diode for cascade solar cell application
journal, August 1993


Monolithic, series-connected InP/Ga/sub 0.47/In/sub 0.53/As tandem solar cells
conference, January 1993


In 1− x Ga x As‐GaSb 1− y As y heterojunctions by molecular beam epitaxy
journal, August 1977