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Title: Method and apparatus for micromachining using hard X-rays

Abstract

An X-ray source such as a synchrotron which provides a significant spectral content of hard X-rays is used to expose relatively thick photoresist such that the portions of the photoresist at an exit surface receive at least a threshold dose sufficient to render the photoresist susceptible to a developer, while the entrance surface of the photoresist receives an exposure which does not exceed a power limit at which destructive disruption of the photoresist would occur. The X-ray beam is spectrally shaped to substantially eliminate lower energy photons while allowing a substantial flux of higher energy photons to pass through to the photoresist target. Filters and the substrate of the X-ray mask may be used to spectrally shape the X-ray beam. Machining of photoresists such as polymethylmethacrylate to micron tolerances may be obtained to depths of several centimeters, and multiple targets may be exposed simultaneously. The photoresist target may be rotated and/or translated in the beam to form solids of rotation and other complex three-dimensional structures.

Inventors:
 [1];  [2];  [3];  [3]
  1. (Shoreham, NY)
  2. (Ridge, NY)
  3. (Madison, WI)
Issue Date:
Research Org.:
ASSOC UNIVERSITIES INC
OSTI Identifier:
871193
Patent Number(s):
5679502
Application Number:
08/405,662
Assignee:
Wisconsin Alumni Research Foundation (Madison, WI) BNL
DOE Contract Number:  
AC02-76CH00016
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; apparatus; micromachining; hard; x-rays; x-ray; source; synchrotron; provides; significant; spectral; content; expose; relatively; thick; photoresist; portions; exit; surface; receive; threshold; dose; sufficient; render; susceptible; developer; entrance; receives; exposure; exceed; power; limit; destructive; disruption; occur; beam; spectrally; shaped; substantially; eliminate; energy; photons; allowing; substantial; flux; pass; target; filters; substrate; mask; shape; machining; photoresists; polymethylmethacrylate; micron; tolerances; obtained; depths; centimeters; multiple; targets; exposed; simultaneously; rotated; translated; form; solids; rotation; complex; three-dimensional; structures; relatively thick; x-ray source; x-ray beam; spectral content; multiple target; multiple targets; substantially eliminate; form solid; energy photon; energy photons; dimensional structure; hard x-rays; surface receive; /430/205/378/

Citation Formats

Siddons, David Peter, Johnson, Erik D., Guckel, Henry, and Klein, Jonathan L. Method and apparatus for micromachining using hard X-rays. United States: N. p., 1997. Web.
Siddons, David Peter, Johnson, Erik D., Guckel, Henry, & Klein, Jonathan L. Method and apparatus for micromachining using hard X-rays. United States.
Siddons, David Peter, Johnson, Erik D., Guckel, Henry, and Klein, Jonathan L. Tue . "Method and apparatus for micromachining using hard X-rays". United States. https://www.osti.gov/servlets/purl/871193.
@article{osti_871193,
title = {Method and apparatus for micromachining using hard X-rays},
author = {Siddons, David Peter and Johnson, Erik D. and Guckel, Henry and Klein, Jonathan L.},
abstractNote = {An X-ray source such as a synchrotron which provides a significant spectral content of hard X-rays is used to expose relatively thick photoresist such that the portions of the photoresist at an exit surface receive at least a threshold dose sufficient to render the photoresist susceptible to a developer, while the entrance surface of the photoresist receives an exposure which does not exceed a power limit at which destructive disruption of the photoresist would occur. The X-ray beam is spectrally shaped to substantially eliminate lower energy photons while allowing a substantial flux of higher energy photons to pass through to the photoresist target. Filters and the substrate of the X-ray mask may be used to spectrally shape the X-ray beam. Machining of photoresists such as polymethylmethacrylate to micron tolerances may be obtained to depths of several centimeters, and multiple targets may be exposed simultaneously. The photoresist target may be rotated and/or translated in the beam to form solids of rotation and other complex three-dimensional structures.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {10}
}

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