Photodetectors using III-V nitrides

Moustakas, Theodore D.; Misra, Mira

Title: Photodetectors using III-V nitrides

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Inventors:: Moustakas, Theodore D.; Misra, Mira

Issue Date:: 1997-01-01

Research Org.:: Boston Univ., MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 871184

Patent Number(s):: 5677538

Application Number:: 08/499,710

Assignee:: Trustees of Boston University (Boston, MA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

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DOE Contract Number:: FG02-94ER81843

Resource Type:: Patent

Resource Relation:: Patent File Date: 1995 Jul 07

Country of Publication:: United States

Language:: English

Subject:: /250/

Citation Formats


                    Moustakas, Theodore D., and Misra, Mira. Photodetectors using III-V nitrides.  United States: N. p., 1997. 
        Web.

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                    Moustakas, Theodore D., & Misra, Mira. Photodetectors using III-V nitrides.  United States.

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                    Moustakas, Theodore D., and Misra, Mira. Wed .  
        "Photodetectors using III-V nitrides".  United States.  https://www.osti.gov/servlets/purl/871184.

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@article{osti_871184,

  title        = {Photodetectors using III-V nitrides},

  author       = {Moustakas, Theodore D. and Misra, Mira},

  abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {1}

}

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Works referenced in this record:

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Similar Records

Title: Photodetectors using III-V nitrides

Abstract

Citation Formats

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment journal, September 1990

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon journal, May 1992

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy journal, September 1994

Metal contacts to gallium nitride journal, May 1993

High responsivity UV photoconductors based on GaN epilayers conference, January 1993

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE journal, January 1992

Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111) journal, June 1995

Growth of GaN by ECR-assisted MBE book, January 1993

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer journal, August 1994

Thermal expansion of gallium nitride journal, October 1994

High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers journal, June 1992

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates journal, March 1983

Growth and Doping of GaN Films by ECR-Assisted MBE journal, January 1992

Local vibrational modes in Mg-doped gallium nitride journal, May 1994

Conduction-electron spin resonance in zinc-blende GaN thin films journal, November 1993

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy journal, January 1993

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n ‐GaAs journal, November 1970

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer journal, February 1986

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE journal, November 1989

Intensity dependence of photoluminescence in GaN thin films journal, January 1994

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate journal, September 1988

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED journal, January 1991

A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates journal, January 1992

Blue‐violet light emitting gallium nitride p ‐ n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy journal, January 1995

Hydrogenation of Gallium Nitride journal, January 1993

Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species journal, October 1994

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon journal, August 1991

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy conference, June 1995

High Mobility GaN films Produced by ECR-Assisted MBE journal, January 1992

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates journal, October 1993

Hydrogenation of p ‐type gallium nitride journal, April 1994

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment
journal, September 1990

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
journal, May 1992

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
journal, September 1994

Metal contacts to gallium nitride
journal, May 1993

High responsivity UV photoconductors based on GaN epilayers
conference, January 1993

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
journal, January 1992

Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
journal, June 1995

Growth of GaN by ECR-assisted MBE
book, January 1993

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
journal, August 1994

Thermal expansion of gallium nitride
journal, October 1994

High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
journal, June 1992

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
journal, March 1983

Growth and Doping of GaN Films by ECR-Assisted MBE
journal, January 1992

Local vibrational modes in Mg-doped gallium nitride
journal, May 1994

Conduction-electron spin resonance in zinc-blende GaN thin films
journal, November 1993

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
journal, January 1993

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n ‐GaAs
journal, November 1970

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
journal, November 1989

Intensity dependence of photoluminescence in GaN thin films
journal, January 1994

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
journal, September 1988

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates
journal, January 1992

Blue‐violet light emitting gallium nitride p ‐ n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
journal, January 1995

Hydrogenation of Gallium Nitride
journal, January 1993

Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
journal, October 1994

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
journal, August 1991

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
conference, June 1995

High Mobility GaN films Produced by ECR-Assisted MBE
journal, January 1992

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
journal, October 1993

Hydrogenation of p ‐type gallium nitride
journal, April 1994