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Title: Photodetectors using III-V nitrides

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Inventors:
 [1];  [2]
  1. Dover, MA
  2. Arlington, MA
Issue Date:
Research Org.:
Radiation Monitoring Devices, Inc., Watertown, MA (United States)
OSTI Identifier:
871184
Patent Number(s):
5677538
Assignee:
Trustees of Boston University (Boston, MA)
DOE Contract Number:  
FG02-94ER81843
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
photodetectors; iii-v; nitrides; photodetector; nitride; predetermined; electrical; properties; disclosed; substrate; interdigitated; electrodes; formed; surface; sapphire; base; layer; buffer; single; crystal; film; layers; electron; cyclotron; resonance; microwave; plasma-assisted; molecular; beam; epitaxy; ecr-assisted; process; allows; control; predetermination; nitride film; electrodes formed; layer formed; electron cyclotron; buffer layer; single crystal; electrical properties; molecular beam; base layer; cyclotron resonance; process allows; microwave plasma; beam epitaxy; predetermined electric; iii-v nitride; predetermined electrical; iii-v nitrides; allows control; /250/

Citation Formats

Moustakas, Theodore D, and Misra, Mira. Photodetectors using III-V nitrides. United States: N. p., 1997. Web.
Moustakas, Theodore D, & Misra, Mira. Photodetectors using III-V nitrides. United States.
Moustakas, Theodore D, and Misra, Mira. Wed . "Photodetectors using III-V nitrides". United States. https://www.osti.gov/servlets/purl/871184.
@article{osti_871184,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, Theodore D and Misra, Mira},
abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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