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Title: Photodetectors using III-V nitrides

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Inventors:
;
Issue Date:
Research Org.:
Boston Univ., MA (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
871184
Patent Number(s):
5677538
Application Number:
08/499,710
Assignee:
Trustees of Boston University (Boston, MA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
DOE Contract Number:  
FG02-94ER81843
Resource Type:
Patent
Resource Relation:
Patent File Date: 1995 Jul 07
Country of Publication:
United States
Language:
English
Subject:
/250/

Citation Formats

Moustakas, Theodore D., and Misra, Mira. Photodetectors using III-V nitrides. United States: N. p., 1997. Web.
Moustakas, Theodore D., & Misra, Mira. Photodetectors using III-V nitrides. United States.
Moustakas, Theodore D., and Misra, Mira. Wed . "Photodetectors using III-V nitrides". United States. https://www.osti.gov/servlets/purl/871184.
@article{osti_871184,
title = {Photodetectors using III-V nitrides},
author = {Moustakas, Theodore D. and Misra, Mira},
abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

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  • Misra, Mira; Moustakas, Theodore D.; Vaudo, Robert P.
  • SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings
  • https://doi.org/10.1117/12.211915

High Mobility GaN films Produced by ECR-Assisted MBE
journal, January 1992


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journal, October 1993


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journal, April 1994