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Title: Photodetectors using III-V nitrides

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.
 [1];  [2]
  1. (Dover, MA)
  2. (Arlington, MA)
Issue Date:
OSTI Identifier:
Trustees of Boston University (Boston, MA) CHO
Patent Number(s):
US 5677538
Contract Number:
Research Org:
Radiation Monitoring Devices, Inc., Watertown, MA (United States)
Country of Publication:
United States
photodetectors; iii-v; nitrides; photodetector; nitride; predetermined; electrical; properties; disclosed; substrate; interdigitated; electrodes; formed; surface; sapphire; base; layer; buffer; single; crystal; film; layers; electron; cyclotron; resonance; microwave; plasma-assisted; molecular; beam; epitaxy; ecr-assisted; process; allows; control; predetermination; nitride film; electrodes formed; layer formed; electron cyclotron; buffer layer; single crystal; electrical properties; molecular beam; base layer; cyclotron resonance; process allows; microwave plasma; beam epitaxy; predetermined electric; iii-v nitride; predetermined electrical; iii-v nitrides; allows control; /250/