Photodetectors using III-V nitrides

Moustakas, Theodore D.; Misra, Mira

Advanced Search OptionsAdvanced Search queries use a traditional Term Search. For more info, see our FAQ.

All Fields:

Patent Title:

Abstract:

Assignee:

Inventor(s):

Patent Number:

Patent Classification (CPC):

All Classifications
A - human necessities
A01 - agriculture
A21 - baking
A22 - butchering
A23 - foods or foodstuffs
A24 - tobacco
A41 - wearing apparel
A42 - headwear
A43 - footwear
A44 - haberdashery
A45 - hand or travelling articles
A46 - brushware
A47 - furniture
A61 - medical or veterinary science
A62 - life-saving
A63 - sports
A99 - subject matter not otherwise provided for in this section
B - performing operations
B01 - physical or chemical processes or apparatus in general
B02 - crushing, pulverising, or disintegrating
B03 - separation of solid materials using liquids or using pneumatic tables or jigs
B04 - centrifugal apparatus or machines for carrying-out physical or chemical processes
B05 - spraying or atomising in general
B06 - generating or transmitting mechanical vibrations in general
B07 - separating solids from solids
B08 - cleaning
B09 - disposal of solid waste
B21 - mechanical metal-working without essentially removing material
B22 - casting
B23 - machine tools
B24 - grinding
B25 - hand tools
B26 - hand cutting tools
B27 - working or preserving wood or similar material
B28 - working cement, clay, or stone
B29 - working of plastics
B30 - presses
B31 - making articles of paper, cardboard or material worked in a manner analogous to paper
B32 - layered products
B33 - additive manufacturing technology
B41 - printing
B42 - bookbinding
B43 - writing or drawing implements
B44 - decorative arts
B60 - vehicles in general
B61 - railways
B62 - land vehicles for travelling otherwise than on rails
B63 - ships or other waterborne vessels
B64 - aircraft
B65 - conveying
B66 - hoisting
B67 - opening, closing {or cleaning} bottles, jars or similar containers
B68 - saddlery
B81 - microstructural technology
B82 - nanotechnology
B99 - subject matter not otherwise provided for in this section
C - chemistry
C01 - inorganic chemistry
C02 - treatment of water, waste water, sewage, or sludge
C03 - glass
C04 - cements
C05 - fertilisers
C06 - explosives
C07 - organic chemistry
C08 - organic macromolecular compounds
C09 - dyes
C10 - petroleum, gas or coke industries
C11 - animal or vegetable oils, fats, fatty substances or waxes
C12 - biochemistry
C13 - sugar industry
C14 - skins
C21 - metallurgy of iron
C22 - metallurgy
C23 - coating metallic material
C25 - electrolytic or electrophoretic processes
C30 - crystal growth
C40 - combinatorial technology
C99 - subject matter not otherwise provided for in this section
D - textiles
D01 - natural or man-made threads or fibres
D02 - yarns
D03 - weaving
D04 - braiding
D05 - sewing
D06 - treatment of textiles or the like
D07 - ropes
D10 - indexing scheme associated with sublasses of section d, relating to textiles
D21 - paper-making
D99 - subject matter not otherwise provided for in this section
E - fixed constructions
E01 - construction of roads, railways, or bridges
E02 - hydraulic engineering
E03 - water supply
E04 - building
E05 - locks
E06 - doors, windows, shutters, or roller blinds in general
E21 - earth drilling
E99 - subject matter not otherwise provided for in this section
F - mechanical engineering
F01 - machines or engines in general
F02 - combustion engines
F03 - machines or engines for liquids
F04 - positive - displacement machines for liquids
F05 - indexing schemes relating to engines or pumps in various subclasses of classes f01-f04
F15 - fluid-pressure actuators
F16 - engineering elements and units
F17 - storing or distributing gases or liquids
F21 - lighting
F22 - steam generation
F23 - combustion apparatus
F24 - heating
F25 - refrigeration or cooling
F26 - drying
F27 - furnaces
F28 - heat exchange in general
F41 - weapons
F42 - ammunition
F99 - subject matter not otherwise provided for in this section
G - physics
G01 - measuring
G02 - optics
G03 - photography
G04 - horology
G05 - controlling
G06 - computing
G07 - checking-devices
G08 - signalling
G09 - education
G10 - musical instruments
G11 - information storage
G12 - instrument details
G16 - information and communication technology [ict] specially adapted for specific application fields
G21 - nuclear physics
G99 - subject matter not otherwise provided for in this section
H - electricity
H01 - basic electric elements
H02 - generation
H03 - basic electronic circuitry
H04 - electric communication technique
H05 - electric techniques not otherwise provided for
H99 - subject matter not otherwise provided for in this section
Y - new / cross sectional technologies
Y02 - technologies or applications for mitigation or adaptation against climate change
Y04 - information or communication technologies having an impact on other technology areas
Y10 - technical subjects covered by former uspc

More Options ...

Title: Photodetectors using III-V nitrides

Abstract

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Inventors:: Moustakas, Theodore D.; Misra, Mira

Issue Date:: Wed Jan 01 00:00:00 EST 1997

Research Org.:: Boston Univ., MA (United States)

Sponsoring Org.:: USDOE

OSTI Identifier:: 871184

Patent Number(s):: 5677538

Application Number:: 08/499,710

Assignee:: Trustees of Boston University (Boston, MA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/0304 - including, apart from doping materials or other impurities, only AIIIBV compounds
H01L31/184 - {the active layers comprising only AIIIBV compounds, e.g. GaAs, InP}
H01L31/1852 - {comprising a growth substrate not being an AIIIBV compound}

Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
Y02E10/544 - Solar cells from Group III-V materials

Show less

DOE Contract Number:: FG02-94ER81843

Resource Type:: Patent

Resource Relation:: Patent File Date: 1995 Jul 07

Country of Publication:: United States

Language:: English

Subject:: /250/

Citation Formats


                    Moustakas, Theodore D., and Misra, Mira. Photodetectors using III-V nitrides.  United States: N. p., 1997. 
        Web.

Copy to clipboard


                    Moustakas, Theodore D., & Misra, Mira. Photodetectors using III-V nitrides.  United States.

Copy to clipboard


                    Moustakas, Theodore D., and Misra, Mira. Wed .  
        "Photodetectors using III-V nitrides".  United States.  https://www.osti.gov/servlets/purl/871184.

Copy to clipboard


                    
@article{osti_871184,

  title        = {Photodetectors using III-V nitrides},

  author       = {Moustakas, Theodore D. and Misra, Mira},

  abstractNote = {A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {Wed Jan 01 00:00:00 EST 1997},

  month        = {Wed Jan 01 00:00:00 EST 1997}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Works referenced in this record:

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment
journal, September 1990

Sitar, Z.; Paisley, M. J.; Smith, D. K.
Review of Scientific Instruments, Vol. 61, Issue 9
https://doi.org/10.1063/1.1141371

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
journal, May 1992

Lei, T.; Moustakas, T. D.; Graham, R. J.
Journal of Applied Physics, Vol. 71, Issue 10
https://doi.org/10.1063/1.350642

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
journal, September 1994

Basu, S. N.; Lei, T.; Moustakas, T. D.
Journal of Materials Research, Vol. 9, Issue 9
https://doi.org/10.1557/JMR.1994.2370

Metal contacts to gallium nitride
journal, May 1993

Foresi, J. S.; Moustakas, T. D.
Applied Physics Letters, Vol. 62, Issue 22
https://doi.org/10.1063/1.109207

High responsivity UV photoconductors based on GaN epilayers
conference, January 1993

Reitz, Larry F.
San Diego '92, SPIE Proceedings
https://doi.org/10.1117/12.140863

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
journal, January 1992

Moustakas, T. D.; Molnar, R. J.; Lei, T.
MRS Proceedings, Vol. 242
https://doi.org/10.1557/PROC-242-427

Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
journal, June 1995

Stevens, K. S.; Kinniburgh, M.; Beresford, R.
Applied Physics Letters, Vol. 66, Issue 25
https://doi.org/10.1063/1.113783

Growth of GaN by ECR-assisted MBE
book, January 1993

Moustakas, T. D.; Lei, T.; Molnar, R. J.
Wide-Band-Gap Semiconductors
https://doi.org/10.1016/B978-0-444-81573-6.50008-6

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
journal, August 1994

Teisseyre, H.; Perlin, P.; Suski, T.
Journal of Applied Physics, Vol. 76, Issue 4
https://doi.org/10.1063/1.357592

Thermal expansion of gallium nitride
journal, October 1994

Leszczynski, M.; Suski, T.; Teisseyre, H.
Journal of Applied Physics, Vol. 76, Issue 8
https://doi.org/10.1063/1.357273

High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
journal, June 1992

Khan, M. Asif; Kuznia, J. N.; Olson, D. T.
Applied Physics Letters, Vol. 60, Issue 23
https://doi.org/10.1063/1.106819

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
journal, March 1983

Yoshida, S.; Misawa, S.; Gonda, S.
Applied Physics Letters, Vol. 42, Issue 5
https://doi.org/10.1063/1.93952

Growth and Doping of GaN Films by ECR-Assisted MBE
journal, January 1992

Moustakas, T. D.; Molnar, R. J.
MRS Proceedings, Vol. 281
https://doi.org/10.1557/PROC-281-753

Local vibrational modes in Mg-doped gallium nitride
journal, May 1994

Brandt, M. S.; Ager, J. W.; Götz, W.
Physical Review B, Vol. 49, Issue 20
https://doi.org/10.1103/PhysRevB.49.14758

Conduction-electron spin resonance in zinc-blende GaN thin films
journal, November 1993

Fanciulli, M.; Lei, T.; Moustakas, T. D.
Physical Review B, Vol. 48, Issue 20
https://doi.org/10.1103/PhysRevB.48.15144

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
journal, January 1993

Eddy, C. R.; Moustakas, T. D.; Scanlon, J.
Journal of Applied Physics, Vol. 73, Issue 1
https://doi.org/10.1063/1.353870

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n ‐GaAs
journal, November 1970

Eberhardt, J. E.; Ryan, R. D.; Tavendale, A. J.
Applied Physics Letters, Vol. 17, Issue 10
https://doi.org/10.1063/1.1653257

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986

Amano, H.; Sawaki, N.; Akasaki, I.
Applied Physics Letters, Vol. 48, Issue 5, p. 353-355
https://doi.org/10.1063/1.96549

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
journal, November 1989

Akasaki, Isamu; Amano, Hiroshi; Koide, Yasuo
Journal of Crystal Growth, Vol. 98, Issue 1-2
https://doi.org/10.1016/0022-0248(89)90200-5

Intensity dependence of photoluminescence in GaN thin films
journal, January 1994

Singh, R.; Molnar, R. J.; Ünlü, M. S.
Applied Physics Letters, Vol. 64, Issue 3
https://doi.org/10.1063/1.111968

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
journal, September 1988

Amano, Hiroshi; Akasaki, Isamu; Hiramatsu, Kazumasa
Thin Solid Films, Vol. 163
https://doi.org/10.1016/0040-6090(88)90458-0

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

Isamu Akasaki,
Journal of Luminescence, Vol. 48-49
https://doi.org/10.1016/0022-2313(91)90215-H

A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates
journal, January 1992

Lei, T.; Moustakas, T. D.
MRS Proceedings, Vol. 242
https://doi.org/10.1557/PROC-242-433

Blue‐violet light emitting gallium nitride p ‐ n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
journal, January 1995

Molnar, R. J.; Singh, R.; Moustakas, T. D.
Applied Physics Letters, Vol. 66, Issue 3
https://doi.org/10.1063/1.113513

Hydrogenation of Gallium Nitride
journal, January 1993

Brandt, M. S.; Johnson, N. M.; Molnar, R. J.
MRS Proceedings, Vol. 325
https://doi.org/10.1557/PROC-325-341

Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
journal, October 1994

Molnar, R. J.; Moustakas, T. D.
Journal of Applied Physics, Vol. 76, Issue 8
https://doi.org/10.1063/1.357293

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
journal, August 1991

Lei, T.; Fanciulli, M.; Molnar, R. J.
Applied Physics Letters, Vol. 59, Issue 8
https://doi.org/10.1063/1.106309

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
conference, June 1995

Misra, Mira; Moustakas, Theodore D.; Vaudo, Robert P.
SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, SPIE Proceedings
https://doi.org/10.1117/12.211915

High Mobility GaN films Produced by ECR-Assisted MBE
journal, January 1992

Molnar, R. J.; Lei, T.; Moustakas, T. D.
MRS Proceedings, Vol. 281
https://doi.org/10.1557/PROC-281-765

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
journal, October 1993

Lei, T.; Ludwig, K. F.; Moustakas, T. D.
Journal of Applied Physics, Vol. 74, Issue 7
https://doi.org/10.1063/1.354414

Hydrogenation of p ‐type gallium nitride
journal, April 1994

Brandt, M. S.; Johnson, N. M.; Molnar, R. J.
Applied Physics Letters, Vol. 64, Issue 17
https://doi.org/10.1063/1.111639

Similar Records in DOE Patents and OSTI.GOV collections:

Photodetectors using III-V nitrides

Patent Moustakas, Theodore D.

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.
Full Text Available
Dilute Group III-V nitride intermediate band solar cells with contact blocking layers

Patent Walukiewicz, Wladyslaw [Kensington, CA]; Yu, Kin Man [Lafayette, CA]

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, themore » « less
Full Text Available
Dilute group III-V nitride intermediate band solar cells with contact blocking layers

Patent Walukiewicz, Wladyslaw; Yu, Kin Man

An intermediate band solar cell (IBSC) is provided including a p-n junction based on dilute III-V nitride materials and a pair of contact blocking layers positioned on opposite surfaces of the p-n junction for electrically isolating the intermediate band of the p-n junction by blocking the charge transport in the intermediate band without affecting the electron and hole collection efficiency of the p-n junction, thereby increasing open circuit voltage (V.sub.OC) of the IBSC and increasing the photocurrent by utilizing the intermediate band to absorb photons with energy below the band gap of the absorber layers of the IBSC. Hence, themore » « less
Full Text Available
Photodetectors using III-V nitrides

Patent Moustakas, T D; Misra, M

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.
Photodetectors using III-V nitrides

Patent Moustakas, T D

A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

Similar Records

Title: Photodetectors using III-V nitrides

Abstract

Citation Formats

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment journal, September 1990

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon journal, May 1992

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy journal, September 1994

Metal contacts to gallium nitride journal, May 1993

High responsivity UV photoconductors based on GaN epilayers conference, January 1993

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE journal, January 1992

Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111) journal, June 1995

Growth of GaN by ECR-assisted MBE book, January 1993

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer journal, August 1994

Thermal expansion of gallium nitride journal, October 1994

High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers journal, June 1992

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates journal, March 1983

Growth and Doping of GaN Films by ECR-Assisted MBE journal, January 1992

Local vibrational modes in Mg-doped gallium nitride journal, May 1994

Conduction-electron spin resonance in zinc-blende GaN thin films journal, November 1993

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy journal, January 1993

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n ‐GaAs journal, November 1970

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer journal, February 1986

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE journal, November 1989

Intensity dependence of photoluminescence in GaN thin films journal, January 1994

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate journal, September 1988

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED journal, January 1991

A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates journal, January 1992

Blue‐violet light emitting gallium nitride p ‐ n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy journal, January 1995

Hydrogenation of Gallium Nitride journal, January 1993

Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species journal, October 1994

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon journal, August 1991

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy conference, June 1995

High Mobility GaN films Produced by ECR-Assisted MBE journal, January 1992

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates journal, October 1993

Hydrogenation of p ‐type gallium nitride journal, April 1994

Design and performance of an electron cyclotron resonance plasma source for standard molecular beam epitaxy equipment
journal, September 1990

Epitaxial growth and characterization of zinc‐blende gallium nitride on (001) silicon
journal, May 1992

Microstructures of GaN films deposited on (001) and (111) Si substrates using electron cyclotron resonance assisted-molecular beam epitaxy
journal, September 1994

Metal contacts to gallium nitride
journal, May 1993

High responsivity UV photoconductors based on GaN epilayers
conference, January 1993

A Comparative Study of GaN Films Grown on Different Faces of Sapphire by ECR-Assisted MBE
journal, January 1992

Photoconductive ultraviolet sensor using Mg‐doped GaN on Si(111)
journal, June 1995

Growth of GaN by ECR-assisted MBE
book, January 1993

Temperature dependence of the energy gap in GaN bulk single crystals and epitaxial layer
journal, August 1994

Thermal expansion of gallium nitride
journal, October 1994

High‐responsivity photoconductive ultraviolet sensors based on insulating single‐crystal GaN epilayers
journal, June 1992

Improvements on the electrical and luminescent properties of reactive molecular beam epitaxially grown GaN films by using AlN‐coated sapphire substrates
journal, March 1983

Growth and Doping of GaN Films by ECR-Assisted MBE
journal, January 1992

Local vibrational modes in Mg-doped gallium nitride
journal, May 1994

Conduction-electron spin resonance in zinc-blende GaN thin films
journal, November 1993

Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
journal, January 1993

HIGH‐RESOLUTION NUCLEAR RADIATION DETECTORS FROM EPITAXIAL n ‐GaAs
journal, November 1970

Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer
journal, February 1986

Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
journal, November 1989

Intensity dependence of photoluminescence in GaN thin films
journal, January 1994

Effects of the buffer layer in metalorganic vapour phase epitaxy of GaN on sapphire substrate
journal, September 1988

Photoluminescence of Mg-doped p-type GaN and electroluminescence of GaN p-n junction LED
journal, January 1991

A Comparative Study of GaN Epitaxy on Si(001) and SI(111) Substrates
journal, January 1992

Blue‐violet light emitting gallium nitride p ‐ n junctions grown by electron cyclotron resonance‐assisted molecular beam epitaxy
journal, January 1995

Hydrogenation of Gallium Nitride
journal, January 1993

Growth of gallium nitride by electron‐cyclotron resonance plasma‐assisted molecular‐beam epitaxy: The role of charged species
journal, October 1994

Epitaxial growth of zinc blende and wurtzitic gallium nitride thin films on (001) silicon
journal, August 1991

Photoconducting ultraviolet detectors based on GaN films grown by electron cyclotron resonance molecular beam epitaxy
conference, June 1995

High Mobility GaN films Produced by ECR-Assisted MBE
journal, January 1992

Heteroepitaxy, polymorphism, and faulting in GaN thin films on silicon and sapphire substrates
journal, October 1993

Hydrogenation of p ‐type gallium nitride
journal, April 1994