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Title: Using sputter coated glass to stabilize microstrip gas chambers

Abstract

By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.

Inventors:
 [1]
  1. Albany, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
871174
Patent Number(s):
5675470
Assignee:
Regents of University of California (Oakland, CA)
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
sputter; coated; glass; stabilize; microstrip; gas; chambers; coating; thin-layer; low-resistive; electronically-conductive; various; substrates; including; quartz; ceramics; thin-film; pestov; msgc; stability; leakage; current; rate; capability; fabricated; design; choice; substrate; save; cost; ion-implantation; material; conductive glass; sputter coating; leakage current; gas chamber; sputter coated; various substrates; rate capability; glass material; coated glass; strip gas; microstrip gas; gas chambers; /361/

Citation Formats

Gong, Wen G. Using sputter coated glass to stabilize microstrip gas chambers. United States: N. p., 1997. Web.
Gong, Wen G. Using sputter coated glass to stabilize microstrip gas chambers. United States.
Gong, Wen G. Wed . "Using sputter coated glass to stabilize microstrip gas chambers". United States. https://www.osti.gov/servlets/purl/871174.
@article{osti_871174,
title = {Using sputter coated glass to stabilize microstrip gas chambers},
author = {Gong, Wen G},
abstractNote = {By sputter coating a thin-layer of low-resistive, electronically-conductive glass on various substrates (including quartz and ceramics, thin-film Pestov glass), microstrip gas chambers (MSGC) of high gain stability, low leakage current, and a high rate capability can be fabricated. This design can make the choice of substrate less important, save the cost of ion-implantation, and use less glass material.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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