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Title: Process for preparing group Ib-IIIa-VIa semiconducting films

Abstract

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.

Inventors:
 [1];  [2];  [2];  [2]
  1. Churchville, MD
  2. Newark, DE
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States); National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org.:
USDOE
OSTI Identifier:
871169
Patent Number(s):
5674555
Application Number:
08/564,957
Assignee:
University of Delaware (Newark, DE)
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; preparing; ib-iiia-via; semiconducting; films; methods; provided; production; supported; monophasic; i-iii-vi; semiconductor; subject; substrate; coated; iii; elements; contacted; reactive; element; containing; atmosphere; conditions; sufficient; produce; composite; i-iii-iv; alloys; resultant; annealed; inert; convert; coating; film; photovoltaic; applications; particularly; absorber; layers; solar; cells; semiconductor film; composite coating; solar cell; solar cells; inert atmosphere; substrate coated; coated substrate; ii-vi semiconductor; absorber layer; semiconductor films; photovoltaic applications; conditions sufficient; conducting films; semiconducting films; conducting film; containing atmosphere; iii elements; element containing; /427/136/438/

Citation Formats

Birkmire, Robert W, Schultz, Jerold M, Marudachalam, Matheswaran, and Hichri, Habib. Process for preparing group Ib-IIIa-VIa semiconducting films. United States: N. p., 1997. Web.
Birkmire, Robert W, Schultz, Jerold M, Marudachalam, Matheswaran, & Hichri, Habib. Process for preparing group Ib-IIIa-VIa semiconducting films. United States.
Birkmire, Robert W, Schultz, Jerold M, Marudachalam, Matheswaran, and Hichri, Habib. Wed . "Process for preparing group Ib-IIIa-VIa semiconducting films". United States. https://www.osti.gov/servlets/purl/871169.
@article{osti_871169,
title = {Process for preparing group Ib-IIIa-VIa semiconducting films},
author = {Birkmire, Robert W and Schultz, Jerold M and Marudachalam, Matheswaran and Hichri, Habib},
abstractNote = {Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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