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Title: Process for preparing group Ib-IIIa-VIa semiconducting films

Methods are provided for the production of supported monophasic group I-III-VI semiconductor films. In the subject methods, a substrate is coated with group I and III elements and then contacted with a reactive group VI element containing atmosphere under conditions sufficient to produce a substrate coated with a composite of at least two different group I-III-IV alloys. The resultant composite coated substrate is then annealed in an inert atmosphere under conditions sufficient to convert the composite coating to a monophasic group I-III-VI semiconductor film. The resultant supported semiconductor films find use in photovoltaic applications, particularly as absorber layers in solar cells.
 [1];  [2];  [2];  [2]
  1. (Churchville, MD)
  2. (Newark, DE)
Issue Date:
OSTI Identifier:
University of Delaware (Newark, DE) NREL
Patent Number(s):
US 5674555
Application Number:
Contract Number:
Research Org:
Midwest Research Institute; National Renewable Energy Lab. (NREL), Golden, CO (United States)
Sponsoring Org:
Country of Publication:
United States
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