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Title: Process for preparing silicon carbide foam

A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.
 [1];  [1];  [2];  [2]
  1. (Livermore, CA)
  2. (Albuquerque, NM)
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5668188
Contract Number:
Research Org:
Country of Publication:
United States
process; preparing; silicon; carbide; foam; method; near; net; shape; monolithic; porous; sic; foams; disclosed; organosilicon; precursors; produce; polymeric; gels; thermally; induced; phase; separation; sufficiently; concentrated; solution; polymer; cooled; below; solidification; temperature; form; following; solvent; removal; pretreated; oxygen; plasma; raise; glass; transition; pyrolized; inert; atmosphere; concentrated solution; cooled below; phase separation; thermally induced; polymer foam; silicon carbide; inert atmosphere; transition temperature; glass transition; near net; oxygen plasma; net shape; preparing silicon; induced phase; following solvent; organosilicon polymer; polymeric gels; produce polymer; /423/264/501/502/521/