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Title: Process for preparing silicon carbide foam

Abstract

A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.

Inventors:
 [1];  [1];  [2];  [2]
  1. Livermore, CA
  2. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
871148
Patent Number(s):
5668188
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
C - CHEMISTRY C04 - CEMENTS C04B - LIME, MAGNESIA
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; preparing; silicon; carbide; foam; method; near; net; shape; monolithic; porous; sic; foams; disclosed; organosilicon; precursors; produce; polymeric; gels; thermally; induced; phase; separation; sufficiently; concentrated; solution; polymer; cooled; below; solidification; temperature; form; following; solvent; removal; pretreated; oxygen; plasma; raise; glass; transition; pyrolized; inert; atmosphere; concentrated solution; cooled below; phase separation; thermally induced; polymer foam; silicon carbide; inert atmosphere; transition temperature; glass transition; near net; oxygen plasma; net shape; preparing silicon; induced phase; following solvent; organosilicon polymer; polymeric gels; produce polymer; /423/264/501/502/521/

Citation Formats

Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, and Loy, Douglas Anson. Process for preparing silicon carbide foam. United States: N. p., 1997. Web.
Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, & Loy, Douglas Anson. Process for preparing silicon carbide foam. United States.
Whinnery, LeRoy Louis, Nichols, Monte Carl, Wheeler, David Roger, and Loy, Douglas Anson. Wed . "Process for preparing silicon carbide foam". United States. https://www.osti.gov/servlets/purl/871148.
@article{osti_871148,
title = {Process for preparing silicon carbide foam},
author = {Whinnery, LeRoy Louis and Nichols, Monte Carl and Wheeler, David Roger and Loy, Douglas Anson},
abstractNote = {A method of preparing near net shape, monolithic, porous SiC foams is disclosed. Organosilicon precursors are used to produce polymeric gels by thermally induced phase separation, wherein, a sufficiently concentrated solution of an organosilicon polymer is cooled below its solidification temperature to form a gel. Following solvent removal from the gel, the polymer foam is pretreated in an oxygen plasma in order to raise its glass transition temperature. The pretreated foam is then pyrolized in an inert atmosphere to form a SiC foam.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Characterization of Organosilicon-Infiltrated Porous Reaction-Sintered Si3N4
journal, November 1978