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Title: Processing method for forming dislocation-free SOI and other materials for semiconductor use

Abstract

A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.

Inventors:
 [1];  [2];  [3]
+ Show Inventor Affiliations
  1. Oak Ridge, TN
  2. Kingston, TN
  3. Sunnyvale, CA
Issue Date:
Research Org.:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
OSTI Identifier:
871115
Patent Number(s):
5661044
Assignee:
Lockheed Martin Energy Systems, Inc. (Oak Ridge, TN)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
processing; method; forming; dislocation-free; soi; materials; semiconductor; preparing; silicon-on-insulator; material; relatively; defect-free; overlayer; involves; implanting; oxygen; silicon; interruption; oxygen-implanting; step; implant; develops; oxide; layer; beneath; surface; introduced; ion-implanting; relieves; strain; developed; intervening; annealing; relieving; manner; likelihood; formation; strain-induced; defects; reduced; addition; carried; temperatures; heretofore; simox; processes; prior; principles; relieve; negative; induced; lattice; structure; processing method; oxide layer; processing temperatures; lattice structure; annealing step; processing temperature; layer beneath; /438/

Citation Formats

Holland, Orin Wayne, Thomas, Darrell Keith, and Zhou, Dashun. Processing method for forming dislocation-free SOI and other materials for semiconductor use. United States: N. p., 1997. Web.
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Holland, Orin Wayne, Thomas, Darrell Keith, & Zhou, Dashun. Processing method for forming dislocation-free SOI and other materials for semiconductor use. United States.
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Holland, Orin Wayne, Thomas, Darrell Keith, and Zhou, Dashun. Wed . "Processing method for forming dislocation-free SOI and other materials for semiconductor use". United States. https://www.osti.gov/servlets/purl/871115.
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@article{osti_871115,
title = {Processing method for forming dislocation-free SOI and other materials for semiconductor use},
author = {Holland, Orin Wayne and Thomas, Darrell Keith and Zhou, Dashun},
abstractNote = {A method for preparing a silicon-on-insulator material having a relatively defect-free Si overlayer involves the implanting of oxygen ions within a silicon body and the interruption of the oxygen-implanting step to implant Si ions within the silicon body. The implanting of the oxygen ions develops an oxide layer beneath the surface of the silicon body, and the Si ions introduced by the Si ion-implanting step relieves strain which is developed in the Si overlayer during the implanting step without the need for any intervening annealing step. By relieving the strain in this manner, the likelihood of the formation of strain-induced defects in the Si overlayer is reduced. In addition, the method can be carried out at lower processing temperatures than have heretofore been used with SIMOX processes of the prior art. The principles of the invention can also be used to relieve negative strain which has been induced in a silicon body of relatively ordered lattice structure.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}
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Works referenced in this record:

Nucleation and growth of SiO2 precipitates in SOI/SIMOX related materials — Dependence upon damage and atomic oxygen profiles
journal, March 1989

  • Hemment, P. L. F.; Reeson, K. J.; Robinson, A. K.
  • Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, Vol. 39, Issue 1-4
  • https://doi.org/10.1016/0168-583X(89)90773-8
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