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Title: Method of making an InAsSb/InAsSbP diode lasers

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.
Inventors:
 [1]
  1. (Wilmette, IL)
Issue Date:
OSTI Identifier:
871102
Assignee:
Northwestern University (Evanston, IL) OSTI
Patent Number(s):
US 5658825
Contract Number:
DAAH04-95-1-0343
Country of Publication:
United States
Language:
English
Subject:
method; inassb; inassbp; diode; lasers; inas; double; heterostructures; dh; separate; confinement; heterostructure; multiple; quantum; sch-mqw; structures; taught; ability; tune; specific; wavelength; varying; ratio; sb; active; layer; diode laser; active layer; specific wavelength; diode lasers; multiple quantum; /117/438/

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