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Title: Method of making an InAsSb/InAsSbP diode lasers

Abstract

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Inventors:
 [1]
  1. Wilmette, IL
Issue Date:
OSTI Identifier:
871102
Patent Number(s):
5658825
Assignee:
Northwestern University (Evanston, IL)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
DOE Contract Number:  
DAAH04-95-1-0343
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; inassb; inassbp; diode; lasers; inas; double; heterostructures; dh; separate; confinement; heterostructure; multiple; quantum; sch-mqw; structures; taught; ability; tune; specific; wavelength; varying; ratio; sb; active; layer; diode laser; active layer; specific wavelength; diode lasers; multiple quantum; /117/438/

Citation Formats

Razeghi, Manijeh. Method of making an InAsSb/InAsSbP diode lasers. United States: N. p., 1997. Web.
Razeghi, Manijeh. Method of making an InAsSb/InAsSbP diode lasers. United States.
Razeghi, Manijeh. Wed . "Method of making an InAsSb/InAsSbP diode lasers". United States. https://www.osti.gov/servlets/purl/871102.
@article{osti_871102,
title = {Method of making an InAsSb/InAsSbP diode lasers},
author = {Razeghi, Manijeh},
abstractNote = {InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Pseudomorphic InAsSb multiple quantum well injection laser emitting at 3.5 μm
journal, March 1996


Double‐heterostructure diode lasers emitting at 3 μm with a metastable GaInAsSb active layer and AlGaAsSb cladding layers
journal, May 1994


InAsSb/AlAsSb double‐heterostructure diode lasers emitting at 4 μm
journal, February 1994


Shallow diffusion of zinc into InAs and InAsSb
journal, November 1988


Efficient GaInAsSb/AlGaAsSb diode lasers emitting at 2.29 μm
journal, September 1990


2.7‐μm InGaAsSb/AlGaAsSb laser diodes with continuous‐wave operation up to −39 °C
journal, September 1995


Room‐temperature cw operation at 2.2 μm of GaInAsSb/AlGaAsSb diode lasers grown by molecular beam epitaxy
journal, September 1991


Radiation recombination in InAsSb/InAsSbP double heterostructures
journal, February 1995


Low-threshold GaInAsSb/GaAlAsSb double-heterostructure lasers grown by LPE
journal, June 1993


Midwave (4 μm) infrared lasers and light‐emitting diodes with biaxially compressed InAsSb active regions
journal, February 1994


High-efficiency high-power GaInAsSb-AlGaAsSb double-heterostructure lasers emitting at 2.3 mu m
journal, June 1991


Low-threshold long-wave lasers ( lambda =3.0-3.6 mu m) based on III-V alloys
journal, August 1993


n ‐AlGaSb and GaSb/AlGaSb double‐heterostructure lasers grown by organometallic vapor phase epitaxy
journal, January 1996


Growth of InAsSb quantum wells for long-wavelength (∼4 μm) lasers
journal, March 1995


High‐power diode‐laser‐pumped InAsSb/GaSb and GaInAsSb/GaSb lasers emitting from 3 to 4 μm
journal, January 1994


2.7–3.9 μm InAsSb(P)/InAsSbP low threshold diode lasers
journal, May 1994


3.06 μm InGaAsSb/InPSb diode lasers grown by organometallic vapor‐phase epitaxy
journal, October 1991


Continuous wave operation of InAs/InAs x Sb 1− x midinfrared lasers
journal, January 1995


New III-V double-heterojunction laser emitting near 3.2μm
journal, January 1988


GaInAsSb-AlGaAsSb tapered lasers emitting at 2 mu m
journal, October 1993


Room‐temperature operation of InGaAsSb/AlGaSb double heterostructure lasers near 2.2 μm prepared by molecular beam epitaxy
journal, October 1986


Some characteristics of 3.2 um injection lasers based on InAsSb/InAsSbP system
conference, February 1991


High-power, high-temperature operation of GaInAsSb-AlGaAsSb ridge-waveguide lasers emitting at 1.9 μm
journal, March 1995