Title: Method of making an InAsSb/InAsSbP diode lasers

Abstract

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Inventors:

Razeghi, Manijeh ^[1]

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1. Wilmette, IL

Issue Date:

1997-01-01

OSTI Identifier:

871102

Patent Number(s):

5658825

Assignee:

Northwestern University (Evanston, IL)

Patent Classifications (CPCs):

B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES

B82Y20/00 - Nanooptics, e.g. quantum optics or photonic crystals

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

H01L21/02395 - {Arsenides}
H01L21/02461 - {Phosphides}
H01L21/02463 - {Arsenides}
H01L21/02466 - {Antimonides}
H01L21/02546 - {Arsenides}
H01L21/02549 - {Antimonides}
H01L21/02576 - {N-type}
H01L21/02579 - {P-type}
H01L21/0262 - {Reduction or decomposition of gaseous compounds, e.g. CVD}
H01L21/02658 - {Pretreatments

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT

H01S2302/00 - Amplification / lasing wavelength
H01S5/343 - in AIIIBV compounds, e.g. AlGaAs-laser {, InP-based laser}
H01S5/34306 - {emitting light at a wavelength longer than 1000nm, e.g. InP based 1300 and 1500nm lasers}

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DOE Contract Number:  

DAAH04-95-1-0343

Resource Type:

Patent

Country of Publication:

United States

Language:

English

Subject:

method; inassb; inassbp; diode; lasers; inas; double; heterostructures; dh; separate; confinement; heterostructure; multiple; quantum; sch-mqw; structures; taught; ability; tune; specific; wavelength; varying; ratio; sb; active; layer; diode laser; active layer; specific wavelength; diode lasers; multiple quantum; /117/438/