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Title: Method of making an InAsSb/InAsSbP diode lasers

Abstract

InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.

Inventors:
 [1]
  1. Wilmette, IL
Issue Date:
OSTI Identifier:
871102
Patent Number(s):
5658825
Assignee:
Northwestern University (Evanston, IL)
DOE Contract Number:  
DAAH04-95-1-0343
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; inassb; inassbp; diode; lasers; inas; double; heterostructures; dh; separate; confinement; heterostructure; multiple; quantum; sch-mqw; structures; taught; ability; tune; specific; wavelength; varying; ratio; sb; active; layer; diode laser; active layer; specific wavelength; diode lasers; multiple quantum; /117/438/

Citation Formats

Razeghi, Manijeh. Method of making an InAsSb/InAsSbP diode lasers. United States: N. p., 1997. Web.
Razeghi, Manijeh. Method of making an InAsSb/InAsSbP diode lasers. United States.
Razeghi, Manijeh. Wed . "Method of making an InAsSb/InAsSbP diode lasers". United States. https://www.osti.gov/servlets/purl/871102.
@article{osti_871102,
title = {Method of making an InAsSb/InAsSbP diode lasers},
author = {Razeghi, Manijeh},
abstractNote = {InAsSb/InAsSbP/InAs Double Heterostructures (DH) and Separate Confinement Heterostructure Multiple Quantum Well (SCH-MQW) structures are taught wherein the ability to tune to a specific wavelength within 3 .mu.m to 5 .mu.m is possible by varying the ratio of As:Sb in the active layer.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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