P-type gallium nitride

Rubin, Michael; Newman, Nathan; Fu, Tracy; Ross, Jennifer; Chan, James

Title: P-type gallium nitride

Full Record
Other Related Research

Abstract

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Inventors:

Rubin, Michael ^[1]; Newman, Nathan ^[2]; Fu, Tracy ^[1]; Ross, Jennifer ^[3]; Chan, James ^[1]

Berkeley, CA
Montara, CA
Pleasanton, CA

Issue Date:: 1997-01-01

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 871095

Patent Number(s):: 5657335

Application Number:: 08/146502

Assignee:: Regents, University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

Show more

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L33/007 - {comprising nitride compounds}
H01L33/325 - {characterised by the doping materials}
H01L33/32 - containing nitrogen
H01L21/2233 - {Diffusion into or out of AIIIBV compounds}
H01L21/26546 - {of electrically active species}

Show less

DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: p-type; gallium; nitride; methods; found; sought; electronic; devices; n-type; readily; available; discovery; enable; ultraviolet; blue; light-emitting; diodes; lasers; pgan; photocathode; elements; molecular; beam; epitaxy; substrates; held; proper; temperatures; assisted; nitrogen; energy; produced; types; concentrations; times; 10; 11; cm; mobilities; 500; v-sec; measured; 250; degree; formed; unintentionally-doped; material; doped; magnesium; diffusion; implantation; co-evaporation; applicable; substituted; iii; emitting diodes; emitting diode; cathode element; light-emitting diode; p-type gallium; gallium nitride; molecular beam; electronic devices; readily available; energy produced; light-emitting diodes; beam epitaxy; proper temperature; n-type gallium; electronic device; iii elements; type gallium; blue light; /372/117/252/257/438/

Citation Formats


                    Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, and Chan, James. P-type gallium nitride.  United States: N. p., 1997. 
        Web.

Copy to clipboard


                    Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, & Chan, James. P-type gallium nitride.  United States.

Copy to clipboard


                    Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, and Chan, James. Wed .  
        "P-type gallium nitride".  United States.  https://www.osti.gov/servlets/purl/871095.

Copy to clipboard


                    
@article{osti_871095,

  title        = {P-type gallium nitride},

  author       = {Rubin, Michael and Newman, Nathan and Fu, Tracy and Ross, Jennifer and Chan, James},

  abstractNote = {Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {1}

}

Copy to clipboard

Patent:

Save / Share:

Export Metadata

Save to My Library

Similar Records in DOE Patents and OSTI.GOV collections:

Pure silver ohmic contacts to N- and P- type gallium arsenide materials

Patent Hogan, Stephen J [Golden, CO]

Disclosed is an improved process for manufacturing gallium arsenide semiconductor devices having as its components an n-type gallium arsenide substrate layer and a p-type gallium arsenide diffused layer. The improved process comprises forming a pure silver ohmic contact to both the diffused layer and the substrate layer, wherein the n-type layer comprises a substantially low doping carrier concentration.
Full Text Available
Ultra-thin ohmic contacts for p-type nitride light emitting devices

Patent Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; ...

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be onmore » the n-electrode. « less
Full Text Available
Ultra-thin ohmic contacts for p-type nitride light emitting devices

Patent Raffetto, Mark [Raleigh, NC]; Bharathan, Jayesh [Cary, NC]; Haberern, Kevin [Cary, NC]; ...

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.
Full Text Available
Process for large-scale ammonothermal manufacturing of gallium nitride boules

Patent D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; ...

Large-scale manufacturing of gallium nitride boules using m-plane or wedge-shaped seed crystals can be accomplished using ammonothermal growth methods. Large-area single crystal seed plates are suspended in a rack, placed in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and crystals are grown ammonothermally. The orientation of the m-plane or wedge-shaped seed crystals are chosen to provide efficient utilization of the seed plates and of the volume inside the autoclave or high pressure apparatus.
Full Text Available
Process for large-scale ammonothermal manufacturing of semipolar gallium nitride boules

Patent D'Evelyn, Mark P.; Ehrentraut, Dirk; Kamber, Derrick S.; ...

Methods for large-scale manufacturing of semipolar gallium nitride boules are disclosed. The disclosed methods comprise suspending large-area single crystal seed plates in a rack, placing the rack in a large diameter autoclave or internally-heated high pressure apparatus along with ammonia and a mineralizer, and growing crystals ammonothermally. A bi-faceted growth morphology may be maintained to facilitate fabrication of large area semipolar wafers without growing thick boules.
Full Text Available

Similar Records