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Title: P-type gallium nitride

Abstract

Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.

Inventors:
 [1];  [2];  [1];  [3];  [1]
  1. Berkeley, CA
  2. Montara, CA
  3. Pleasanton, CA
Issue Date:
Research Org.:
Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA
OSTI Identifier:
871095
Patent Number(s):
5657335
Application Number:
08/146502
Assignee:
Regents, University of California (Oakland, CA)
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
p-type; gallium; nitride; methods; found; sought; electronic; devices; n-type; readily; available; discovery; enable; ultraviolet; blue; light-emitting; diodes; lasers; pgan; photocathode; elements; molecular; beam; epitaxy; substrates; held; proper; temperatures; assisted; nitrogen; energy; produced; types; concentrations; times; 10; 11; cm; mobilities; 500; v-sec; measured; 250; degree; formed; unintentionally-doped; material; doped; magnesium; diffusion; implantation; co-evaporation; applicable; substituted; iii; emitting diodes; emitting diode; cathode element; light-emitting diode; p-type gallium; gallium nitride; molecular beam; electronic devices; readily available; energy produced; light-emitting diodes; beam epitaxy; proper temperature; n-type gallium; electronic device; iii elements; type gallium; blue light; /372/117/252/257/438/

Citation Formats

Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, and Chan, James. P-type gallium nitride. United States: N. p., 1997. Web.
Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, & Chan, James. P-type gallium nitride. United States.
Rubin, Michael, Newman, Nathan, Fu, Tracy, Ross, Jennifer, and Chan, James. Wed . "P-type gallium nitride". United States. https://www.osti.gov/servlets/purl/871095.
@article{osti_871095,
title = {P-type gallium nitride},
author = {Rubin, Michael and Newman, Nathan and Fu, Tracy and Ross, Jennifer and Chan, James},
abstractNote = {Several methods have been found to make p-type gallium nitride. P-type gallium nitride has long been sought for electronic devices. N-type gallium nitride is readily available. Discovery of p-type gallium nitride and the methods for making it will enable its use in ultraviolet and blue light-emitting diodes and lasers. pGaN will further enable blue photocathode elements to be made. Molecular beam epitaxy on substrates held at the proper temperatures, assisted by a nitrogen beam of the proper energy produced several types of p-type GaN with hole concentrations of about 5.times.10.sup.11 /cm.sup.3 and hole mobilities of about 500 cm.sup.2 /V-sec, measured at 250.degree. K. P-type GaN can be formed of unintentionally-doped material or can be doped with magnesium by diffusion, ion implantation, or co-evaporation. When applicable, the nitrogen can be substituted with other group III elements such as Al.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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