Unitary lens semiconductor device

Lear, Kevin L

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Title: Unitary lens semiconductor device

Abstract

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Inventors:

Lear, Kevin L ^[1]

Albuquerque, NM

Issue Date:: 1997-01-01

Research Org.:: Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)

OSTI Identifier:: 870970

Patent Number(s):: 5633527

Assignee:: Sandia Corporation (Albuquerque, NM)

Patent Classifications (CPCs):: G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES

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G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
G02B2006/12102 - {Lens}
G02B2006/12121 - {Laser}
G02B6/12004 - {Combinations of two or more optical elements}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
H01L31/02327 - {the optical elements being integrated or being directly associated to the device, e.g. back reflectors
H01L33/02 - characterised by the semiconductor bodies
H01L33/105 - {with a resonant cavity structure}

H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
H01S5/0267 - {Integrated focusing lens
H01S5/18311 - {using selective oxidation}
H01S5/18327 - {Structure being part of a DBR
H01S5/18333 - {only above the active layer}
H01S5/18372 - {by native oxidation}
H01S5/18388 - {Lenses}
H01S5/2205 - {comprising special burying or current confinement layers}

Show less

DOE Contract Number:: AC04-94AL85000

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: unitary; lens; semiconductor; device; method; provided; layer; composition; varying; growth; direction; unitarily; forming; lenses; devices; formed; light-processing; microlenses; light-active; light-emitting; diodes; photodetectors; resonant-cavity; vertical-cavity; surface-emitting; lasers; resonant; cavity; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; vertical-cavity surface-emitting; semiconductor layer; semiconductor device; semiconductor devices; resonant cavity; surface-emitting lasers; light-emitting diodes; resonant-cavity light-emitting; emitting laser; unitary lens; lens semiconductor; emitting lasers; active device; /257/372/

Citation Formats


                    Lear, Kevin L. Unitary lens semiconductor device.  United States: N. p., 1997. 
        Web.

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                    Lear, Kevin L. Unitary lens semiconductor device.  United States.

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                    Lear, Kevin L. Wed .  
        "Unitary lens semiconductor device".  United States.  https://www.osti.gov/servlets/purl/870970.

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@article{osti_870970,

  title        = {Unitary lens semiconductor device},

  author       = {Lear, Kevin L},

  abstractNote = {A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1997},

  month        = {1}

}

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Works referenced in this record:

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994

Huffaker, D. L.; Shin, J.; Deng, H.
Applied Physics Letters, Vol. 65, Issue 21
https://doi.org/10.1063/1.112589

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Lear, K. L.; Schneider, R. P.; Choquette, K. D.
Electronics Letters, Vol. 30, Issue 24
https://doi.org/10.1049/el:19941421

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
journal, August 1994

Ries, M. J.; Richard, T. A.; Maranowski, S. A.
Applied Physics Letters, Vol. 65, Issue 6
https://doi.org/10.1063/1.112216

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994

Zhao, H.; Steier, W. H.; Dapkus, P. D.
Electronics Letters, Vol. 30, Issue 14
https://doi.org/10.1049/el:19940754

Low threshold half-wave vertical-cavity lasers
journal, November 1994

Huffaker, D. L.; Deppe, D. G.; Shin, J.
Electronics Letters, Vol. 30, Issue 23
https://doi.org/10.1049/el:19941348

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994

Huffaker, D. L.; Deppe, D. G.; Kumar, K.
Applied Physics Letters, Vol. 65, Issue 1
https://doi.org/10.1063/1.113087

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994

Huffaker, D. L.; Deppe, D. G.; Rogers, T. J.
Applied Physics Letters, Vol. 65, Issue 13
https://doi.org/10.1063/1.112927

Native‐oxide stripe‐geometry Al _x Ga _{1− x} As‐GaAs quantum well heterostructure lasers
journal, January 1991

Dallesasse, J. M.; Holonyak, N.
Applied Physics Letters, Vol. 58, Issue 4
https://doi.org/10.1063/1.104645

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Similar Records

Title: Unitary lens semiconductor device

Abstract

Citation Formats

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers journal, November 1994

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation journal, November 1994

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors journal, August 1994

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers journal, July 1994

Low threshold half-wave vertical-cavity lasers journal, November 1994

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers journal, July 1994

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers journal, September 1994

Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers journal, January 1991

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994

Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994

Photopumped room‐temperature edge‐ and vertical‐cavity operation of AlGaAs‐GaAs‐InGaAs quantum‐well heterostructure lasers utilizing native oxide mirrors
journal, August 1994

Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994

Low threshold half-wave vertical-cavity lasers
journal, November 1994

Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994

Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994

Native‐oxide stripe‐geometry Al _x Ga _{1− x} As‐GaAs quantum well heterostructure lasers
journal, January 1991