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Title: Unitary lens semiconductor device

Abstract

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Inventors:
 [1]
  1. Albuquerque, NM
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870970
Patent Number(s):
5633527
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
unitary; lens; semiconductor; device; method; provided; layer; composition; varying; growth; direction; unitarily; forming; lenses; devices; formed; light-processing; microlenses; light-active; light-emitting; diodes; photodetectors; resonant-cavity; vertical-cavity; surface-emitting; lasers; resonant; cavity; cavity surface; surface-emitting laser; emitting diodes; emitting diode; light-emitting diode; vertical-cavity surface-emitting; semiconductor layer; semiconductor device; semiconductor devices; resonant cavity; surface-emitting lasers; light-emitting diodes; resonant-cavity light-emitting; emitting laser; unitary lens; lens semiconductor; emitting lasers; active device; /257/372/

Citation Formats

Lear, Kevin L. Unitary lens semiconductor device. United States: N. p., 1997. Web.
Lear, Kevin L. Unitary lens semiconductor device. United States.
Lear, Kevin L. Wed . "Unitary lens semiconductor device". United States. https://www.osti.gov/servlets/purl/870970.
@article{osti_870970,
title = {Unitary lens semiconductor device},
author = {Lear, Kevin L},
abstractNote = {A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Improved mode stability in low threshold single quantum well native‐oxide defined vertical‐cavity lasers
journal, November 1994


Low threshold voltage vertical-cavity lasers fabricated by selective oxidation
journal, November 1994


Wide-bandwidth distributed Bragg reflectors using oxide/GaAs multilayers
journal, July 1994


Low threshold half-wave vertical-cavity lasers
journal, November 1994


Native‐oxide defined ring contact for low threshold vertical‐cavity lasers
journal, July 1994


Transverse mode behavior in native‐oxide‐defined low threshold vertical‐cavity lasers
journal, September 1994


Native‐oxide stripe‐geometry Al x Ga 1− x As‐GaAs quantum well heterostructure lasers
journal, January 1991