Method for processing silicon solar cells
Abstract
The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.
- Inventors:
-
- Golden, CO
- Lafayette, CO
- Lakewood, CO
- Issue Date:
- Research Org.:
- Midwest Research Institute, Kansas City, MO (United States)
- OSTI Identifier:
- 870942
- Patent Number(s):
- 5627081
- Assignee:
- Midwest Research Institute (Kansas City, MO)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE Y02E - REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- DOE Contract Number:
- AC36-83CH10093
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; processing; silicon; solar; cells; instant; teaches; novel; fabricating; utilizing; concentrated; radiation; furnace; form; front; surface; junction; back-surface; field; step; provides; multicrystallline; amorphous; texturing; wafer; forming; porous; layer; substrate; gettering; impurities; contemplated; methods; passivation; cell; structures; hydrogen; surface passivation; cells utilizing; cell structure; silicon layer; porous silicon; amorphous silicon; solar cell; solar cells; silicon substrate; solar radiation; silicon solar; front surface; novel method; processing step; novel solar; solar furnace; concentrated solar; fabricating silicon; surface field; surface pass; /438/136/216/
Citation Formats
Tsuo, Y Simon, Landry, Marc D, and Pitts, John R. Method for processing silicon solar cells. United States: N. p., 1997.
Web.
Tsuo, Y Simon, Landry, Marc D, & Pitts, John R. Method for processing silicon solar cells. United States.
Tsuo, Y Simon, Landry, Marc D, and Pitts, John R. Wed .
"Method for processing silicon solar cells". United States. https://www.osti.gov/servlets/purl/870942.
@article{osti_870942,
title = {Method for processing silicon solar cells},
author = {Tsuo, Y Simon and Landry, Marc D and Pitts, John R},
abstractNote = {The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}
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