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Title: Method for processing silicon solar cells

Abstract

The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.

Inventors:
 [1];  [2];  [3]
  1. Golden, CO
  2. Lafayette, CO
  3. Lakewood, CO
Issue Date:
Research Org.:
Midwest Research Institute, Kansas City, MO (United States)
OSTI Identifier:
870942
Patent Number(s):
5627081
Assignee:
Midwest Research Institute (Kansas City, MO)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
AC36-83CH10093
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; processing; silicon; solar; cells; instant; teaches; novel; fabricating; utilizing; concentrated; radiation; furnace; form; front; surface; junction; back-surface; field; step; provides; multicrystallline; amorphous; texturing; wafer; forming; porous; layer; substrate; gettering; impurities; contemplated; methods; passivation; cell; structures; hydrogen; surface passivation; cells utilizing; cell structure; silicon layer; porous silicon; amorphous silicon; solar cell; solar cells; silicon substrate; solar radiation; silicon solar; front surface; novel method; processing step; novel solar; solar furnace; concentrated solar; fabricating silicon; surface field; surface pass; /438/136/216/

Citation Formats

Tsuo, Y Simon, Landry, Marc D, and Pitts, John R. Method for processing silicon solar cells. United States: N. p., 1997. Web.
Tsuo, Y Simon, Landry, Marc D, & Pitts, John R. Method for processing silicon solar cells. United States.
Tsuo, Y Simon, Landry, Marc D, and Pitts, John R. Wed . "Method for processing silicon solar cells". United States. https://www.osti.gov/servlets/purl/870942.
@article{osti_870942,
title = {Method for processing silicon solar cells},
author = {Tsuo, Y Simon and Landry, Marc D and Pitts, John R},
abstractNote = {The instant invention teaches a novel method for fabricating silicon solar cells utilizing concentrated solar radiation. The solar radiation is concentrated by use of a solar furnace which is used to form a front surface junction and back-surface field in one processing step. The present invention also provides a method of making multicrystallline silicon from amorphous silicon. The invention also teaches a method of texturing the surface of a wafer by forming a porous silicon layer on the surface of a silicon substrate and a method of gettering impurities. Also contemplated by the invention are methods of surface passivation, forming novel solar cell structures, and hydrogen passivation.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Polycrystalline Si thin-film solar cell prepared by solid phase crystallization (SPC) method
journal, September 1994


Sub-5 μm thin film c-Si solar cell and optical confinement by diffuse reflective-substrate
journal, September 1994


Effect of substrate temperature on recrystallization of plasma chemical vapor deposition amorphous silicon films
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Towards high-eficiency silicon solar cells by rapid thermal processing
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High-efficient operation of large-area (100 cm2) thin film polycrystalline silicon solar cell based on SOI structure
journal, September 1994


The physics of amorphous-silicon thin-film transistors
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Complete microcrystalline pin solar cell—Crystalline or amorphous cell behavior?
journal, August 1994


Laser-recrystallized silicon thin-film transistors on expansion-matched 800°C glass
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High-performance TFTs fabricated by XeCl excimer laser annealing of hydrogenated amorphous-silicon film
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Investigation of the effects of aluminum treatment on silicon solar cells
conference, January 1993


Solar cell structures combining amorphous, microcrystalline, and single-crystalline silicon
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Low temperature crystallization of amorphous silicon using an excimer laser
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Recent results on hydrogen passivation of silicon sheet solar cells
journal, June 1985


Ion irradiation enhanced crystal nucleation in amorphous Si thin films
journal, October 1990