Integration of photoactive and electroactive components with vertical cavity surface emitting lasers
Abstract
A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.
- Inventors:
-
- 12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112
- 1105 Sagebrush Trail SE., Albuquerque, NM 87123
- 12 Timberline Dr., Bridgewater, NJ 08807
- 13713 Vic Rd. NE., Albuquerque, NM 87112
- 3875 Orange Ct., Boulder, CO 80304
- Issue Date:
- Research Org.:
- AT&T
- OSTI Identifier:
- 870929
- Patent Number(s):
- 5625636
- Assignee:
- Bryan, Robert P. (12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112);Esherick, Peter (1105 Sagebrush Trail SE., Albuquerque, NM 87123);Jewell, Jack L. (12 Timberline Dr., Bridgewater, NJ 08807);Lear, Kevin L. (13713 Vic Rd. NE., Albuquerque, NM 87112);Olbright, Gregory R. (3875 Orange Ct., Boulder, CO 80304)
- Patent Classifications (CPCs):
-
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
- DOE Contract Number:
- AC04-76DP00789
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- integration; photoactive; electroactive; components; vertical; cavity; surface; emitting; lasers; monolithically; integrated; optoelectronic; device; provided; integrates; laser; photosensitive; electrosensitive; input; output; parallel; series; connection; side-by-side; arrangements; disclosed; optical; electronic; feedback; means; arrays; devices; configured; enable; computing; neural; network; applications; cavity surface; neural network; vertical cavity; surface emitting; series connection; monolithically integrated; active components; emitting laser; electronic device; sensitive device; emitting lasers; optoelectronic device; neural net; active component; /372/
Citation Formats
Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, and Olbright, Gregory R. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers. United States: N. p., 1997.
Web.
Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, & Olbright, Gregory R. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers. United States.
Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, and Olbright, Gregory R. Wed .
"Integration of photoactive and electroactive components with vertical cavity surface emitting lasers". United States. https://www.osti.gov/servlets/purl/870929.
@article{osti_870929,
title = {Integration of photoactive and electroactive components with vertical cavity surface emitting lasers},
author = {Bryan, Robert P and Esherick, Peter and Jewell, Jack L and Lear, Kevin L and Olbright, Gregory R},
abstractNote = {A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}
Works referenced in this record:
Double heterostructure optoelectronic switch as a dynamic memory with low‐power consumption
journal, February 1988
- Kasahara, K.; Tashiro, Y.; Hamao, N.
- Applied Physics Letters, Vol. 52, Issue 9
Chapter 5 Phototransistors for Lightwave Communications
book, January 1985
- Campbell, J. C.
- Semiconductors and Semimetals
Full solid state image converter based on integration of phototransistors and LEDs
journal, April 1981
- Beneking, H.
- IEEE Electron Device Letters, Vol. 2, Issue 4
InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
journal, April 1981
- Sasaki, Akio; Kuzuhara, Masaaki
- Japanese Journal of Applied Physics, Vol. 20, Issue 4
A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy
journal, January 1986
- Taylor, G. W.; Simmons, J. G.; Cho, A. Y.
- Journal of Applied Physics, Vol. 59, Issue 2
GaAs-GaAlAs phototransistor/laser light amplifier
journal, January 1980
- Beneking, H.; Grote, N.; Roth, W.
- Electronics Letters, Vol. 16, Issue 15
Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application
conference, January 1989
- Lin, S. H.; Kim, J. H.; Katz, J.
- Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes
journal, January 1991
- Olbright, G. R.; Bryan, R. P.; Lear, K.
- Electronics Letters, Vol. 27, Issue 3
Vertical to surface transmission electrophotonic device with selectable output light channels
journal, January 1989
- Tashiro, Y.; Hamao, N.; Sugimoto, M.
- Applied Physics Letters, Vol. 54, Issue 4
Low-threshold electrically pumped vertical-cavity surface-emitting microlasers
journal, January 1989
- Jewell, J. L.; Lee, Y. H.; Walker, S.
- Electronics Letters, Vol. 25, Issue 17