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Title: Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

Abstract

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

Inventors:
 [1];  [2];  [3];  [4];  [5]
  1. 12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112
  2. 1105 Sagebrush Trail SE., Albuquerque, NM 87123
  3. 12 Timberline Dr., Bridgewater, NJ 08807
  4. 13713 Vic Rd. NE., Albuquerque, NM 87112
  5. 3875 Orange Ct., Boulder, CO 80304
Issue Date:
Research Org.:
AT&T
OSTI Identifier:
870929
Patent Number(s):
5625636
Assignee:
Bryan, Robert P. (12700 Indian School Rd. NE., Apt. 604, Albuquerque, NM 87112);Esherick, Peter (1105 Sagebrush Trail SE., Albuquerque, NM 87123);Jewell, Jack L. (12 Timberline Dr., Bridgewater, NJ 08807);Lear, Kevin L. (13713 Vic Rd. NE., Albuquerque, NM 87112);Olbright, Gregory R. (3875 Orange Ct., Boulder, CO 80304)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01S - DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT
G - PHYSICS G02 - OPTICS G02B - OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
integration; photoactive; electroactive; components; vertical; cavity; surface; emitting; lasers; monolithically; integrated; optoelectronic; device; provided; integrates; laser; photosensitive; electrosensitive; input; output; parallel; series; connection; side-by-side; arrangements; disclosed; optical; electronic; feedback; means; arrays; devices; configured; enable; computing; neural; network; applications; cavity surface; neural network; vertical cavity; surface emitting; series connection; monolithically integrated; active components; emitting laser; electronic device; sensitive device; emitting lasers; optoelectronic device; neural net; active component; /372/

Citation Formats

Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, and Olbright, Gregory R. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers. United States: N. p., 1997. Web.
Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, & Olbright, Gregory R. Integration of photoactive and electroactive components with vertical cavity surface emitting lasers. United States.
Bryan, Robert P, Esherick, Peter, Jewell, Jack L, Lear, Kevin L, and Olbright, Gregory R. Wed . "Integration of photoactive and electroactive components with vertical cavity surface emitting lasers". United States. https://www.osti.gov/servlets/purl/870929.
@article{osti_870929,
title = {Integration of photoactive and electroactive components with vertical cavity surface emitting lasers},
author = {Bryan, Robert P and Esherick, Peter and Jewell, Jack L and Lear, Kevin L and Olbright, Gregory R},
abstractNote = {A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Double heterostructure optoelectronic switch as a dynamic memory with low‐power consumption
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Full solid state image converter based on integration of phototransistors and LEDs
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InGaAsP-InP Heterojunction Phototransistors and Light Amplifiers
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A new double‐heterostructure optoelectronic switching device using molecular‐beam epitaxy
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Integration of high-gain double heterojunction GaAs bipolar transistors with a LED for optical neural network application
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Cascadable laser logic devices: discrete integration of phototransistors with surface-emitting laser diodes
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