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Title: Dry etching method for compound semiconductors

Abstract

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Inventors:
 [1];  [2]
  1. Albuquerque, NM
  2. Safety Harbor, FL
Issue Date:
Research Org.:
Sandia National Laboratories (SNL), Albuquerque, NM, and Livermore, CA (United States)
OSTI Identifier:
870918
Patent Number(s):
5624529
Application Number:
08/437532
Assignee:
Sandia Corporation (Albuquerque, NM)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
dry; etching; method; compound; semiconductors; according; gaseous; plasma; comprising; boron; trichloride; methane; hydrogen; semiconductor; material; containing; layers; including; aluminum; indium; alloy; algainp; anisotropically; etched; forming; electronic; devices; field-effect; transistors; heterojunction; bipolar; photonic; vertical-cavity; surface-emitting; lasers; edge-emitting; reflectance; modulators; material layer; cavity surface; surface-emitting laser; compound semiconductors; boron trichloride; field-effect transistor; vertical-cavity surface-emitting; dry etching; semiconductor material; material containing; compound semiconductor; electronic devices; surface-emitting lasers; material layers; semiconductor alloy; devices including; effect transistor; emitting laser; field-effect transistors; electronic device; bipolar transistors; bipolar transistor; layers including; reflectance modulator; effect transistors; edge-emitting lasers; heterojunction bipolar; forming electronic; including aluminum; including vertical; emitting lasers; gaseous plasma; etching method; anisotropically etched; containing layer; /438/216/252/

Citation Formats

Shul, Randy J, and Constantine, Christopher. Dry etching method for compound semiconductors. United States: N. p., 1997. Web.
Shul, Randy J, & Constantine, Christopher. Dry etching method for compound semiconductors. United States.
Shul, Randy J, and Constantine, Christopher. Wed . "Dry etching method for compound semiconductors". United States. https://www.osti.gov/servlets/purl/870918.
@article{osti_870918,
title = {Dry etching method for compound semiconductors},
author = {Shul, Randy J and Constantine, Christopher},
abstractNote = {A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

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Works referenced in this record:

Anisotropic electron cyclotron resonance etching of GaInP/AlGaInP heterostructures
journal, May 1994


High‐rate, anisotropic dry etching of InP in HI‐based discharges
journal, February 1992


Characteristics of III‐V Dry Etching In HBr ‐ Based Discharges
journal, March 1992


Microwave CI2/H2 discharges for high rate etching of InP
journal, January 1992


635 nm GaInP/GaAlInP surface‐emitting laser diodes
journal, December 1993


Electron cyclotron resonance plasma etching of InP in CH 4 /H 2 /Ar
journal, April 1990


High Rate Anisotropic Aluminum Etching
journal, June 1983


GaInP/AlGaInP index waveguide-type visible laser diodes with dry-etched mesa stripes
journal, January 1993


Plasma and wet chemical etching of In0.5Ga0.5P
journal, April 1992


Investigations of dry etching in AlGaInP/GaInP using CCl2F2/Ar reactive ion etching and Ar ion beam etching
journal, November 1991


Smooth vertical etching of AlGaInP by Cl2 reactive ion beam etching
journal, January 1993


Anisotropic reactive ion etching of InP in methane/hydrogen based plasmas
journal, November 1991


Reactive ion etching of InP using CH4/H2 mixtures: Mechanisms of etching and anisotropy
journal, September 1989


Plasma etching of III–V semiconductors in CH4/H2/Ar electron cyclotron resonance discharges
journal, July 1990