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Title: Dry etching method for compound semiconductors

Abstract

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.

Inventors:
 [1];  [2]
  1. Albuquerque, NM
  2. Safety Harbor, FL
Issue Date:
Research Org.:
SANDIA CORP
OSTI Identifier:
870918
Patent Number(s):
5624529
Application Number:
08/437532
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-94AL85000
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
dry; etching; method; compound; semiconductors; according; gaseous; plasma; comprising; boron; trichloride; methane; hydrogen; semiconductor; material; containing; layers; including; aluminum; indium; alloy; algainp; anisotropically; etched; forming; electronic; devices; field-effect; transistors; heterojunction; bipolar; photonic; vertical-cavity; surface-emitting; lasers; edge-emitting; reflectance; modulators; material layer; cavity surface; surface-emitting laser; compound semiconductors; boron trichloride; field-effect transistor; vertical-cavity surface-emitting; dry etching; semiconductor material; material containing; compound semiconductor; electronic devices; surface-emitting lasers; material layers; semiconductor alloy; devices including; effect transistor; emitting laser; field-effect transistors; electronic device; bipolar transistors; bipolar transistor; layers including; reflectance modulator; effect transistors; edge-emitting lasers; heterojunction bipolar; forming electronic; including aluminum; including vertical; emitting lasers; gaseous plasma; etching method; anisotropically etched; containing layer; /438/216/252/

Citation Formats

Shul, Randy J, and Constantine, Christopher. Dry etching method for compound semiconductors. United States: N. p., 1997. Web.
Shul, Randy J, & Constantine, Christopher. Dry etching method for compound semiconductors. United States.
Shul, Randy J, and Constantine, Christopher. Wed . "Dry etching method for compound semiconductors". United States. https://www.osti.gov/servlets/purl/870918.
@article{osti_870918,
title = {Dry etching method for compound semiconductors},
author = {Shul, Randy J and Constantine, Christopher},
abstractNote = {A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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