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Title: Dry etching method for compound semiconductors

A dry etching method. According to the present invention, a gaseous plasma comprising, at least in part, boron trichloride, methane, and hydrogen may be used for dry etching of a compound semiconductor material containing layers including aluminum, or indium, or both. Material layers of a compound semiconductor alloy such as AlGaInP or the like may be anisotropically etched for forming electronic devices including field-effect transistors and heterojunction bipolar transistors and for forming photonic devices including vertical-cavity surface-emitting lasers, edge-emitting lasers, and reflectance modulators.
 [1];  [2]
  1. (Albuquerque, NM)
  2. (Safety Harbor, FL)
Issue Date:
OSTI Identifier:
Sandia Corporation (Albuquerque, NM) SNL
Patent Number(s):
US 5624529
Application Number:
Contract Number:
Research Org:
Country of Publication:
United States
dry; etching; method; compound; semiconductors; according; gaseous; plasma; comprising; boron; trichloride; methane; hydrogen; semiconductor; material; containing; layers; including; aluminum; indium; alloy; algainp; anisotropically; etched; forming; electronic; devices; field-effect; transistors; heterojunction; bipolar; photonic; vertical-cavity; surface-emitting; lasers; edge-emitting; reflectance; modulators; material layer; cavity surface; surface-emitting laser; compound semiconductors; boron trichloride; field-effect transistor; vertical-cavity surface-emitting; dry etching; semiconductor material; material containing; compound semiconductor; electronic devices; surface-emitting lasers; material layers; semiconductor alloy; devices including; effect transistor; emitting laser; field-effect transistors; electronic device; bipolar transistors; bipolar transistor; layers including; reflectance modulator; effect transistors; edge-emitting lasers; heterojunction bipolar; forming electronic; including aluminum; including vertical; emitting lasers; gaseous plasma; etching method; anisotropically etched; containing layer; /438/216/252/