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Title: Diamond film growth from fullerene precursors

Abstract

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.

Inventors:
 [1];  [2];  [3];  [2]
  1. Downers Grove, IL
  2. Woodridge, IL
  3. Naperville, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
870901
Patent Number(s):
5620512
Assignee:
University of Chicago (Chicago, IL)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
diamond; film; growth; fullerene; precursors; method; manufacturing; involves; forming; vapor; providing; noble; gas; stream; combining; passing; combined; carrier; chamber; plasma; causing; fragmentation; deposition; substrate; film growth; method involves; gas stream; diamond film; noble gas; involves forming; carrier stream; causing fragmentation; chamber causing; fullerene vapor; method involve; gas carrier; manufacturing diamond; /117/423/

Citation Formats

Gruen, Dieter M, Liu, Shengzhong, Krauss, Alan R, and Pan, Xianzheng. Diamond film growth from fullerene precursors. United States: N. p., 1997. Web.
Gruen, Dieter M, Liu, Shengzhong, Krauss, Alan R, & Pan, Xianzheng. Diamond film growth from fullerene precursors. United States.
Gruen, Dieter M, Liu, Shengzhong, Krauss, Alan R, and Pan, Xianzheng. Wed . "Diamond film growth from fullerene precursors". United States. https://www.osti.gov/servlets/purl/870901.
@article{osti_870901,
title = {Diamond film growth from fullerene precursors},
author = {Gruen, Dieter M and Liu, Shengzhong and Krauss, Alan R and Pan, Xianzheng},
abstractNote = {A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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