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Title: Diamond film growth from fullerene precursors

A method and system for manufacturing diamond film. The method involves forming a fullerene vapor, providing a noble gas stream and combining the gas with the fullerene vapor, passing the combined fullerene vapor and noble gas carrier stream into a chamber, forming a plasma in the chamber causing fragmentation of the fullerene and deposition of a diamond film on a substrate.
 [1];  [2];  [3];  [2]
  1. (Downers Grove, IL)
  2. (Woodridge, IL)
  3. (Naperville, IL)
Issue Date:
OSTI Identifier:
University of Chicago (Chicago, IL) ANL
Patent Number(s):
US 5620512
Contract Number:
Research Org:
Argonne National Laboratory (ANL), Argonne, IL
Country of Publication:
United States
diamond; film; growth; fullerene; precursors; method; manufacturing; involves; forming; vapor; providing; noble; gas; stream; combining; passing; combined; carrier; chamber; plasma; causing; fragmentation; deposition; substrate; film growth; method involves; gas stream; diamond film; noble gas; involves forming; carrier stream; causing fragmentation; chamber causing; fullerene vapor; method involve; gas carrier; manufacturing diamond; /117/423/