Diamond films treated with alkali-halides
Abstract
A secondary electron emitter is provided and includes a substrate with a diamond film, the diamond film is treated or coated with an alkali-halide.
- Inventors:
-
- Batavia, IL
- Geneva, IL
- Issue Date:
- Research Org.:
- Fermi National Accelerator Laboratory (FNAL), Batavia, IL (United States)
- OSTI Identifier:
- 870896
- Patent Number(s):
- 5619091
- Assignee:
- Universities Research Association, Inc. (Washington, DC)
- Patent Classifications (CPCs):
-
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- DOE Contract Number:
- AC02-76CH03000
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- diamond; films; treated; alkali-halides; secondary; electron; emitter; provided; substrate; film; coated; alkali-halide; electron emitter; diamond film; diamond films; secondary electron; /313/
Citation Formats
Anderson, David F, and Kwan, Simon W. Diamond films treated with alkali-halides. United States: N. p., 1997.
Web.
Anderson, David F, & Kwan, Simon W. Diamond films treated with alkali-halides. United States.
Anderson, David F, and Kwan, Simon W. Wed .
"Diamond films treated with alkali-halides". United States. https://www.osti.gov/servlets/purl/870896.
@article{osti_870896,
title = {Diamond films treated with alkali-halides},
author = {Anderson, David F and Kwan, Simon W},
abstractNote = {A secondary electron emitter is provided and includes a substrate with a diamond film, the diamond film is treated or coated with an alkali-halide.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}
Works referenced in this record:
Schottky barrier height and negative electron affinity of titanium on (111) diamond
journal, July 1992
- van der Weide, J.
- Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, Vol. 10, Issue 4