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Title: Process of preparing tritiated porous silicon

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.
Inventors:
 [1]
  1. (Downers Grove, IL)
Issue Date:
OSTI Identifier:
870840
Assignee:
University of Chicago (Chicago, IL) ANL
Patent Number(s):
US 5604162
Contract Number:
W-31109-ENG-38
Research Org:
Argonne National Laboratory (ANL), Argonne, IL
Country of Publication:
United States
Language:
English
Subject:
process; preparing; tritiated; porous; silicon; equilibrated; gaseous; vapor; containing; gas; diluent; time; sufficient; tritium; phase; replace; hydrogen; pore; surfaces; tritiated porous; vapor containing; gas phase; porous silicon; time sufficient; preparing tritiated; /438/427/