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Title: Process of preparing tritiated porous silicon

Abstract

A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.

Inventors:
 [1]
  1. Downers Grove, IL
Issue Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
870840
Patent Number(s):
5604162
Assignee:
University of Chicago (Chicago, IL)
DOE Contract Number:  
W-31109-ENG-38
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; preparing; tritiated; porous; silicon; equilibrated; gaseous; vapor; containing; gas; diluent; time; sufficient; tritium; phase; replace; hydrogen; pore; surfaces; tritiated porous; vapor containing; gas phase; porous silicon; time sufficient; preparing tritiated; /438/427/

Citation Formats

Tam, Shiu-Wing. Process of preparing tritiated porous silicon. United States: N. p., 1997. Web.
Tam, Shiu-Wing. Process of preparing tritiated porous silicon. United States.
Tam, Shiu-Wing. Wed . "Process of preparing tritiated porous silicon". United States. https://www.osti.gov/servlets/purl/870840.
@article{osti_870840,
title = {Process of preparing tritiated porous silicon},
author = {Tam, Shiu-Wing},
abstractNote = {A process of preparing tritiated porous silicon in which porous silicon is equilibrated with a gaseous vapor containing HT/T.sub.2 gas in a diluent for a time sufficient for tritium in the gas phase to replace hydrogen present in the pore surfaces of the porous silicon.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1997},
month = {1}
}

Patent:

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