Global to push GA events into
skip to main content

Title: Radiation-tolerant imaging device

A barrier at a uniform depth for an entire wafer is used to produce imaging devices less susceptible to noise pulses produced by the passage of ionizing radiation. The barrier prevents charge created in the bulk silicon of a CCD detector or a semiconductor logic or memory device from entering the collection volume of each pixel in the imaging device. The charge barrier is a physical barrier, a potential barrier, or a combination of both. The physical barrier is formed by an SiO.sub.2 insulator. The potential barrier is formed by increasing the concentration of majority carriers (holes) to combine with the electron's generated by the ionizing radiation. A manufacturer of CCD imaging devices can produce radiation-tolerant devices by merely changing the wafer type fed into his process stream from a standard wafer to one possessing a barrier beneath its surface, thus introducing a very small added cost to his production cost. An effective barrier type is an SiO.sub.2 layer.
Inventors:
 [1];  [2]
  1. (Livermore, CA)
  2. (Pleasanton, CA)
Issue Date:
OSTI Identifier:
870691
Assignee:
United States Department of Energy (Washington, DC) LLNL
Patent Number(s):
US 5576561
Contract Number:
W-7405-ENG-48
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
Language:
English
Subject:
radiation-tolerant; imaging; device; barrier; uniform; depth; entire; wafer; produce; devices; susceptible; noise; pulses; produced; passage; ionizing; radiation; prevents; charge; created; bulk; silicon; ccd; detector; semiconductor; logic; memory; entering; collection; volume; pixel; physical; potential; combination; formed; sio; insulator; increasing; concentration; majority; carriers; holes; combine; electron; generated; manufacturer; merely; changing; type; fed; process; stream; standard; possessing; beneath; surface; introducing; added; cost; production; effective; layer; pulses produced; memory device; physical barrier; imaging devices; imaging device; process stream; ionizing radiation; bulk silicon; charge created; effective barrier; uniform depth; produce radiation; production cost; majority carriers; /257/

Similar records in DOepatents and OSTI.GOV collections: