Method for making circular tubular channels with two silicon wafers
Abstract
A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.
- Inventors:
-
- Antioch, CA
- Campbell, CA
- Issue Date:
- Research Org.:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA (United States)
- OSTI Identifier:
- 870689
- Patent Number(s):
- 5575929
- Assignee:
- Regents of University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
G - PHYSICS G01 - MEASURING G01N - INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- DOE Contract Number:
- W-7405-ENG-48
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- method; circular; tubular; channels; silicon; wafers; two-wafer; microcapillary; structure; fabricated; depositing; boron; nitride; bn; separate; crystal-plane; 100; 110; crystal; orientation; photolithography; photoresist; create; exposed; deposition; plasma; etching; slit; entry; created; path; desired; ultimate; acetone; remove; isotropic; etch; hf; hno; cooh; erodes; trench; layer; channel; half-circular; section; formed; line; wet; aligned; bonded; face-to-face; complete; plasma etching; silicon nitride; boron nitride; silicon wafer; wet etching; silicon wafers; tubular channel; plasma etch; crystal orientation; /216/
Citation Formats
Yu, Conrad M, and Hui, Wing C. Method for making circular tubular channels with two silicon wafers. United States: N. p., 1996.
Web.
Yu, Conrad M, & Hui, Wing C. Method for making circular tubular channels with two silicon wafers. United States.
Yu, Conrad M, and Hui, Wing C. Mon .
"Method for making circular tubular channels with two silicon wafers". United States. https://www.osti.gov/servlets/purl/870689.
@article{osti_870689,
title = {Method for making circular tubular channels with two silicon wafers},
author = {Yu, Conrad M and Hui, Wing C},
abstractNote = {A two-wafer microcapillary structure is fabricated by depositing boron nitride (BN) or silicon nitride (Si.sub.3 N.sub.4) on two separate silicon wafers (e.g., crystal-plane silicon with [100] or [110] crystal orientation). Photolithography is used with a photoresist to create exposed areas in the deposition for plasma etching. A slit entry through to the silicon is created along the path desired for the ultimate microcapillary. Acetone is used to remove the photoresist. An isotropic etch, e.g., such as HF/HNO.sub.3 /CH.sub.3 COOH, then erodes away the silicon through the trench opening in the deposition layer. A channel with a half-circular cross section is then formed in the silicon along the line of the trench in the deposition layer. Wet etching is then used to remove the deposition layer. The two silicon wafers are aligned and then bonded together face-to-face to complete the microcapillary.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {Mon Jan 01 00:00:00 EST 1996},
month = {Mon Jan 01 00:00:00 EST 1996}
}
Works referenced in this record:
Chemical Isotropic Etching of Single-Crystal Silicon for Acoustic Lens of Scanning Acoustic Microscope
journal, May 1993
- Hashimoto, Hisayoshi; Tanaka, Shinji; Sato, Kazuo
- Japanese Journal of Applied Physics, Vol. 32, Issue Part 1, No. 5B