skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Method for shallow junction formation

Abstract

A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.

Inventors:
 [1]
  1. (San Jose, CA)
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
870664
Patent Number(s):
5569624
Assignee:
Regents of University of California (Oakland, CA) LLNL
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
method; shallow; junction; formation; doping; sequence; reduces; cost; complexity; forming; source; drain; regions; complementary; metal; oxide; silicon; cmos; integrated; circuit; technologies; process; combines; patterned; excimer; laser; annealing; dopant-saturated; spin-on; glass; silicide; contact; structures; interference; effects; creates; dielectric; layers; produce; junctions; ultrashallow; depth; exhibit; sheet; resistance; utilizes; photolithography; achieved; expensive; vacuum; equipment; margins; wide; yield; loss; due; dopants; eliminated; dielectric layers; laser annealing; process utilizes; dielectric layer; metal oxide; integrated circuit; contact resistance; excimer laser; spin-on glass; shallow junction; complementary metal; contact structure; interference effect; process combines; contact structures; junction formation; /438/148/

Citation Formats

Weiner, Kurt H. Method for shallow junction formation. United States: N. p., 1996. Web.
Weiner, Kurt H. Method for shallow junction formation. United States.
Weiner, Kurt H. Mon . "Method for shallow junction formation". United States. https://www.osti.gov/servlets/purl/870664.
@article{osti_870664,
title = {Method for shallow junction formation},
author = {Weiner, Kurt H.},
abstractNote = {A doping sequence that reduces the cost and complexity of forming source/drain regions in complementary metal oxide silicon (CMOS) integrated circuit technologies. The process combines the use of patterned excimer laser annealing, dopant-saturated spin-on glass, silicide contact structures and interference effects creates by thin dielectric layers to produce source and drain junctions that are ultrashallow in depth but exhibit low sheet and contact resistance. The process utilizes no photolithography and can be achieved without the use of expensive vacuum equipment. The process margins are wide, and yield loss due to contact of the ultrashallow dopants is eliminated.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

Save / Share: