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Title: Process for forming retrograde profiles in silicon

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.
 [1];  [2]
  1. (San Jose, CA)
  2. (Phoenix, AZ)
Issue Date:
OSTI Identifier:
Regents of University of California (Oakland, CA) LLNL
Patent Number(s):
US 5565377
Contract Number:
Research Org:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
Country of Publication:
United States
process; forming; retrograde; profiles; silicon; oscillatory; crystalline; polycrystalline; consisting; introducing; n-; p-type; dopant; prior; doped; exposing; multiple; pulses; high-intensity; laser; appropriate; energy; source; melts; time; duration; depending; directed; peak; surface; concentrations; vary; 1-1e4; produced; treatment; performed; air; vacuum; temperature; heated; selected; laser pulses; laser pulse; energy source; polycrystalline silicon; crystalline silicon; time duration; p-type dopant; selected temperature; doped silicon; type dopant; process consisting; intensity laser; forming retrograde; dopant concentrations; laser treatment; /438/117/