skip to main content
DOE Patents title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Process for forming retrograde profiles in silicon

Abstract

A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.

Inventors:
 [1];  [2]
  1. San Jose, CA
  2. Phoenix, AZ
Issue Date:
Research Org.:
Lawrence Livermore National Lab. (LLNL), Livermore, CA (United States)
OSTI Identifier:
870641
Patent Number(s):
5565377
Assignee:
Regents of University of California (Oakland, CA)
Patent Classifications (CPCs):
H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01L - SEMICONDUCTOR DEVICES
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10S - TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
DOE Contract Number:  
W-7405-ENG-48
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
process; forming; retrograde; profiles; silicon; oscillatory; crystalline; polycrystalline; consisting; introducing; n-; p-type; dopant; prior; doped; exposing; multiple; pulses; high-intensity; laser; appropriate; energy; source; melts; time; duration; depending; directed; peak; surface; concentrations; vary; 1-1e4; produced; treatment; performed; air; vacuum; temperature; heated; selected; laser pulses; laser pulse; energy source; polycrystalline silicon; crystalline silicon; time duration; p-type dopant; selected temperature; doped silicon; type dopant; process consisting; intensity laser; forming retrograde; dopant concentrations; laser treatment; /438/117/

Citation Formats

Weiner, Kurt H, and Sigmon, Thomas W. Process for forming retrograde profiles in silicon. United States: N. p., 1996. Web.
Weiner, Kurt H, & Sigmon, Thomas W. Process for forming retrograde profiles in silicon. United States.
Weiner, Kurt H, and Sigmon, Thomas W. Mon . "Process for forming retrograde profiles in silicon". United States. https://www.osti.gov/servlets/purl/870641.
@article{osti_870641,
title = {Process for forming retrograde profiles in silicon},
author = {Weiner, Kurt H and Sigmon, Thomas W},
abstractNote = {A process for forming retrograde and oscillatory profiles in crystalline and polycrystalline silicon. The process consisting of introducing an n- or p-type dopant into the silicon, or using prior doped silicon, then exposing the silicon to multiple pulses of a high-intensity laser or other appropriate energy source that melts the silicon for short time duration. Depending on the number of laser pulses directed at the silicon, retrograde profiles with peak/surface dopant concentrations which vary from 1-1e4 are produced. The laser treatment can be performed in air or in vacuum, with the silicon at room temperature or heated to a selected temperature.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

Save / Share: