Broad beam ion implanter

Leung, Ka-Ngo

Title: Broad beam ion implanter

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Abstract

An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.

Inventors:

Leung, Ka-Ngo ^[1]

Hercules, CA

Issue Date:: 1996-01-01

Research Org.:: Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)

OSTI Identifier:: 870632

Patent Number(s):: 5563418

Assignee:: Regents, University of California (Oakland, CA)

Patent Classifications (CPCs):: H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS

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H - ELECTRICITY H01 - BASIC ELECTRIC ELEMENTS H01J - ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
H01J2237/083 - Beam forming
H01J2237/31701 - Ion implantation
H01J37/3007 - {Electron or ion-optical systems

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DOE Contract Number:: AC03-76SF00098

Resource Type:: Patent

Country of Publication:: United States

Language:: English

Subject:: broad; beam; implanter; implantation; device; creating; diameter; homogeneous; described; method; characterized; extraction; diverging; conversion; optics; essentially; parallel; comprises; plasma; source; anode; exit; aperture; electrode; divergence-limiting; acceleration; means; connecting; voltage; supply; electrodes; voltage supply; device comprises; exit aperture; extraction electrode; essentially parallel; /250/

Citation Formats


                    Leung, Ka-Ngo. Broad beam ion implanter.  United States: N. p., 1996. 
        Web.

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                    Leung, Ka-Ngo. Broad beam ion implanter.  United States.

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                    Leung, Ka-Ngo. Mon .  
        "Broad beam ion implanter".  United States.  https://www.osti.gov/servlets/purl/870632.

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@article{osti_870632,

  title        = {Broad beam ion implanter},

  author       = {Leung, Ka-Ngo},

  abstractNote = {An ion implantation device for creating a large diameter, homogeneous, ion beam is described, as well as a method for creating same, wherein the device is characterized by extraction of a diverging ion beam and its conversion by ion beam optics to an essentially parallel ion beam. The device comprises a plasma or ion source, an anode and exit aperture, an extraction electrode, a divergence-limiting electrode and an acceleration electrode, as well as the means for connecting a voltage supply to the electrodes.},

  doi          = {},

  journal      = {},
number       = ,

  volume       = ,

  place        = {United States},

  year         = {1996},

  month        = {1}

}

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