Susceptor for EFG crystal growth apparatus
Abstract
An improved susceptor for a crucible/die assembly for growing tubular crystalline structures by the EFG process is provided. The crucible/die assembly comprises a die having a substantially polygonally-shaped top end surface for supporting a film of silicon feed material that is replenished from a melt in the crucible through capillary action. A hollow crystalline body is grown from the film of silicon material on the top end surface of the die. The heat susceptor is made of graphite or similar material, and has a peripheral configuration similar to that of the die. Further, the upper surface of the heat susceptor has a central land and a plurality of circumferentially-spaced upwardly extending projections. The central land thermally contacts a central portion of the lower surface of the crucible/die, and the projections thermally contact the lower surface of the crucible/die at its corners, whereby a temperature distribution is provided that permits growth of hollow bodies having more nearly constant thickness walls.
- Inventors:
-
- Belmont, MA
- Issue Date:
- OSTI Identifier:
- 870588
- Patent Number(s):
- 5551977
- Application Number:
- 339357
- Assignee:
- ASE Americas, Inc. (Billerica, MA)
- Patent Classifications (CPCs):
-
Y - NEW / CROSS SECTIONAL TECHNOLOGIES Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC Y10T - TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
C - CHEMISTRY C30 - CRYSTAL GROWTH C30B - SINGLE-CRYSTAL-GROWTH
- DOE Contract Number:
- NREL-ZM-2-11040-3
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- susceptor; efg; crystal; growth; apparatus; improved; crucible; die; assembly; growing; tubular; crystalline; structures; process; provided; comprises; substantially; polygonally-shaped; top; surface; supporting; film; silicon; feed; material; replenished; melt; capillary; action; hollow; grown; heat; graphite; similar; peripheral; configuration; upper; central; land; plurality; circumferentially-spaced; upwardly; extending; projections; thermally; contacts; portion; contact; corners; whereby; temperature; distribution; permits; bodies; nearly; constant; thickness; walls; silicon material; upwardly extending; crystalline structures; similar material; assembly comprises; upper surface; feed material; crystal growth; central portion; crystalline structure; nearly constant; capillary action; temperature distribution; die assembly; hollow crystalline; growth apparatus; thermally contact; efg crystal; efg process; line structure; /117/
Citation Formats
Menna, Andrew A. Susceptor for EFG crystal growth apparatus. United States: N. p., 1996.
Web.
Menna, Andrew A. Susceptor for EFG crystal growth apparatus. United States.
Menna, Andrew A. Tue .
"Susceptor for EFG crystal growth apparatus". United States. https://www.osti.gov/servlets/purl/870588.
@article{osti_870588,
title = {Susceptor for EFG crystal growth apparatus},
author = {Menna, Andrew A},
abstractNote = {An improved susceptor for a crucible/die assembly for growing tubular crystalline structures by the EFG process is provided. The crucible/die assembly comprises a die having a substantially polygonally-shaped top end surface for supporting a film of silicon feed material that is replenished from a melt in the crucible through capillary action. A hollow crystalline body is grown from the film of silicon material on the top end surface of the die. The heat susceptor is made of graphite or similar material, and has a peripheral configuration similar to that of the die. Further, the upper surface of the heat susceptor has a central land and a plurality of circumferentially-spaced upwardly extending projections. The central land thermally contacts a central portion of the lower surface of the crucible/die, and the projections thermally contact the lower surface of the crucible/die at its corners, whereby a temperature distribution is provided that permits growth of hollow bodies having more nearly constant thickness walls.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {9}
}