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Title: Process for producing cadmium sulfide on a cadmium telluride surface

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.
Inventors:
 [1];  [2];  [1]
  1. (Lakewood, CO)
  2. (Longmont, CO)
Issue Date:
OSTI Identifier:
870538
Assignee:
Midwest Research Institute (Kansas City, MO) NREL
Patent Number(s):
US 5541118
Contract Number:
AC36-83CH10093
Research Org:
Midwest Research Institute
Country of Publication:
United States
Language:
English
Subject:
process; producing; cadmium; sulfide; telluride; surface; layer; employed; photovoltaic; device; comprises; providing; exposed; hydrogen; plasma; exposure; flow; rate; time; temperature; sufficient; permit; reaction; form; accomplish; passivation; addition; heterojunction; interface; formed; thickness; sufficient thickness; comprises providing; flow rate; photovoltaic device; hydrogen sulfide; temperature sufficient; process comprises; cadmium telluride; cadmium sulfide; exposure time; telluride surface; sulfide layer; sulfide form; /438/136/257/427/

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