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Title: Process for producing cadmium sulfide on a cadmium telluride surface

A process for producing a layer of cadmium sulfide on a cadmium telluride surface to be employed in a photovoltaic device. The process comprises providing a cadmium telluride surface which is exposed to a hydrogen sulfide plasma at an exposure flow rate, an exposure time and an exposure temperature sufficient to permit reaction between the hydrogen sulfide and cadmium telluride to thereby form a cadmium sulfide layer on the cadmium telluride surface and accomplish passivation. In addition to passivation, a heterojunction at the interface of the cadmium sulfide and the cadmium telluride can be formed when the layer of cadmium sulfide formed on the cadmium telluride is of sufficient thickness.
 [1];  [2];  [1]
  1. (Lakewood, CO)
  2. (Longmont, CO)
Issue Date:
OSTI Identifier:
Midwest Research Institute (Kansas City, MO) NREL
Patent Number(s):
US 5541118
Contract Number:
Research Org:
Midwest Research Institute
Country of Publication:
United States
process; producing; cadmium; sulfide; telluride; surface; layer; employed; photovoltaic; device; comprises; providing; exposed; hydrogen; plasma; exposure; flow; rate; time; temperature; sufficient; permit; reaction; form; accomplish; passivation; addition; heterojunction; interface; formed; thickness; sufficient thickness; comprises providing; flow rate; photovoltaic device; hydrogen sulfide; temperature sufficient; process comprises; cadmium telluride; cadmium sulfide; exposure time; telluride surface; sulfide layer; sulfide form; /438/136/257/427/