Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices
Abstract
An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layersmore »
- Inventors:
-
- Oakland, CA
- Springfield, NJ
- Issue Date:
- Research Org.:
- Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)
- OSTI Identifier:
- 870515
- Patent Number(s):
- 5537000
- Assignee:
- Regents, University of California (Oakland, CA)
- Patent Classifications (CPCs):
-
B - PERFORMING OPERATIONS B82 - NANOTECHNOLOGY B82Y - SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
H - ELECTRICITY H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR H05B - ELECTRIC HEATING
- Resource Type:
- Patent
- Country of Publication:
- United States
- Language:
- English
- Subject:
- electroluminescent; devices; formed; semiconductor; nanocrystals; electron; transport; media; method; device; described; characterized; nanocrystal; layer; capable; emitting; visible; light; response; voltage; applied; wavelength; emitted; changed; changing; size; type; forming; preferred; embodiment; capability; varying; wavelengths; changes; comprises; processing; structure; injecting; transporting; holes; comprising; contact; layers; electrons; various; principally; based; variations; thereto; nanometer; crystals; play; role; color; change; combination; transport layer; color change; applied thereto; voltage applied; semiconductor nanocrystals; device comprises; preferred embodiment; visible light; light emitted; electron transport; semiconductor nanocrystal; electroluminescent devices; devices formed; structure capable; injecting electrons; /313/445/
Citation Formats
Alivisatos, A Paul, and Colvin, Vickie. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices. United States: N. p., 1996.
Web.
Alivisatos, A Paul, & Colvin, Vickie. Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices. United States.
Alivisatos, A Paul, and Colvin, Vickie. Mon .
"Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices". United States. https://www.osti.gov/servlets/purl/870515.
@article{osti_870515,
title = {Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices},
author = {Alivisatos, A Paul and Colvin, Vickie},
abstractNote = {An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}
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