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Title: Pulsed ion beam source

Abstract

An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.

Inventors:
 [1]
  1. Lansing, NY
Issue Date:
Research Org.:
AT & T CORP
OSTI Identifier:
870461
Patent Number(s):
5525805
Assignee:
Sandia Corporation (Albuquerque, NM)
DOE Contract Number:  
AC04-76DP00789
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
pulsed; beam; source; improved; magnetically-confined; anode; plasma; rotation; effects; power; efficiency; magnetic; design; separatrix; fast; field; flux; structure; slow; near; gas; localizes; delivery; gap; coil; pre-ionizer; ringing; circuit; connected; bias; means; optimally; adjusts; formation; position; circuit connected; beam source; gas delivery; field flux; bias field; power efficiency; plasma formation; field means; improved magnetic; fast coil; /250/315/

Citation Formats

Greenly, John B. Pulsed ion beam source. United States: N. p., 1996. Web.
Greenly, John B. Pulsed ion beam source. United States.
Greenly, John B. Mon . "Pulsed ion beam source". United States. https://www.osti.gov/servlets/purl/870461.
@article{osti_870461,
title = {Pulsed ion beam source},
author = {Greenly, John B},
abstractNote = {An improved magnetically-confined anode plasma pulsed ion beam source. Beam rotation effects and power efficiency are improved by a magnetic design which places the separatrix between the fast field flux structure and the slow field structure near the anode of the ion beam source, by a gas port design which localizes the gas delivery into the gap between the fast coil and the anode, by a pre-ionizer ringing circuit connected to the fast coil, and by a bias field means which optimally adjusts the plasma formation position in the ion beam source.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1996},
month = {1}
}

Patent:

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